IXFH120N20P IXYS, IXFH120N20P Datasheet - Page 2

• Manufacturer Part Number: IXFH120N20P
• Description: MOSFET N-CH 200V 120A TO-247
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXFH120N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 714W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 714 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.022
• Ciss, Typ, (pf): 6000
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 100
• Trr, Max, (ns): 200
• Pd, (w): 714
• Rthjc, Max, (ºc/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-247
TO-264
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25A, -di/dt = 100A/μs
= 100V, V
= 10V, I
= 0V, V
= 10V, V
= 3.3Ω (External)
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 0.5 • I
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
40
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
6000
1300
100
0.21
0.15
Typ.
0.4
6.0
100
Typ.
265
152
30
35
31
40
75
63
0.21 °C/W
Max.
120
300
200
1.5
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
TO-247 (IXFH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
25.91
19.81
20.32
20.80
15.75
19.81
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
5.46 BSC
Millimeter
1
.4
3 - Source
IXFH120N20P
IXFK120N20P
7,005,734 B2
7,063,975 B2
2
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
.215 BSC
242 BSC
1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216