IXTH30N50L

Manufacturer Part NumberIXTH30N50L
DescriptionMOSFET N-CH 500V 30A TO-247
ManufacturerIXYS
IXTH30N50L datasheet
 

Specifications of IXTH30N50L

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs200 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id4.5V @ 250µA
Gate Charge (qg) @ Vgs240nC @ 10VInput Capacitance (ciss) @ Vds10200pF @ 25V
Power - Max400WMounting TypeThrough Hole
Package / CaseTO-247Vdss, Max, (v)500
Id(cont), Tc=25°c, (a)30Rds(on), Max, Tj=25°c, (?)0.20
Ciss, Typ, (pf)10200Qg, Typ, (nc)240
Trr, Typ, (ns)500Pd, (w)400
Rthjc, Max, (k/w)0.31Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Power MOSFET with
Extended FBSOA
N-Channel Enhancement Mode
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
E
AS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.063in) from case for 10s
L
T
Plastic body for 10s
SOLD
M
Mounting torque (TO-247, TO-3P)
d
Weight
TO-247
TO-3P
TO-268
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
V
= 0V, I
= 250μA
DSS
GS
D
V
V
= V
, I
= 250μA
GS(th)
DS
GS
D
= ±30V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
= 0.5 • I
R
V
= 10V, I
DS(on)
GS
D
D25
© 2007 IXYS CORPORATION, All rights reserved
Preliminary Technical Information
IXTH30N50L
IXTQ30N50L
IXTT30N50L
G
O
Maximum Ratings
500
= 1MΩ
500
GS
±20
±30
30
60
JM
30
50
1.5
400
-55 to +150
+150
-55 to +150
300
260
1.13/10
6.0
5.5
5.0
Characteristic Values
Min.
Typ.
500
2.5
T
= 125°C
J
, Note 1
V
= 500V
DSS
I
= 30A
D25
≤ ≤ ≤ ≤ ≤ 0.20Ω Ω Ω Ω Ω
R
DS(on)
D
D D D D
O
O
TO-247 (IXTH)
R
Gi
w
w
O
S
V
TO-3P (IXTQ)
V
V
V
A
G
D
A
S
A
TO-268 (IXTT)
mJ
J
W
°C
G
°C
°C
°C
G = Gate
D
°C
S = Source TAB = Drain
Nm/lb.in.
g
g
Features
g
Designed for linear operation
International standard packages
Unclamped Inductive Switching
(UIS) rated.
Molding epoxies meet UL 94 V-0
flammability classification
Max.
Integrated gate resistor for easy
V
paralleling
Guaranteed FBSOA at 75°C
4.5
V
±100
nA
Applications
μA
50
μA
Solid state circuit breakers
300
Soft start controls
Ω
0.20
Linear amplifiers
Programmable loads
Current regulators
(TAB)
(TAB)
S
(TAB)
= Drain
DS99786(10/07)

IXTH30N50L Summary of contents

  • Page 1

    ... GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH30N50L IXTQ30N50L IXTT30N50L G O Maximum Ratings 500 = 1MΩ 500 GS ±20 ± 1.5 400 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 5 ...

  • Page 2

    ... C Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 100V 500 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH30N50L IXTQ30N50L TO-247 (IXTH) Outline Max Ω Terminals Gate Source ns Dim. Millimeter Min. Max 4 ...

  • Page 3

    ... Value 125º 25º IXTH30N50L IXTQ30N50L Fig. 2. Extended Output Characteristics @ T = 25º 20V GS 14V 70 12V 60 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 30A ...

  • Page 4

    ... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 125ºC J 25ºC - 40ºC 7 7.5 8 8 25ºC J 0.8 0.9 1.0 1.1 1.00 C iss C oss 0.10 C rss 0. IXTH30N50L IXTQ30N50L Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 250V 15A 10mA G 12 ...

  • Page 5

    ... IXYS CORPORATION, All rights reserved Fig. 14. Forward-Bias Safe Operating Area 100.0 R DS(on) 25µs 100µs 10.0 1ms 10ms 1.0 100ms 150ºC J Single Pulse 0.1 1000 10 IXTH30N50L IXTQ30N50L IXTT30N50L @ T = 75ºC C Limit DC 100 V - Volts DS IXYS REF: T_30N50L(7R)10-19-07 25µs 100µs 1ms 10ms 100ms 1000 ...