IXTH30N50L IXYS, IXTH30N50L Datasheet - Page 3

• Manufacturer Part Number: IXTH30N50L
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: IXYS

Specifications of IXTH30N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 10200pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.20
• Ciss, Typ, (pf): 10200
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 500
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
30
27
24
21
18
15
12
30
27
24
21
18
15
12
9
6
3
0
9
6
3
0
0
0
0
Fig. 5. R
0.5
V
1
GS
= 10V
10
2
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
3
1.5
DS(on)
20
4
2
vs. Drain Current
Normalized to I
5
@ T
@ T
V
2.5
I
V
DS
V
D
30
6
GS
DS
- Amperes
- Volts
J
V
J
= 20V
GS
- Volts
= 125ºC
3
7
= 25ºC
12V
10V
9V
= 20V
T
40
12V
10V
3.5
J
9V
8
= 125ºC
9
4
D
50
10
8V
7V
6V
5V
= 15A Value
T
4.5
8V
5V
6V
J
7V
= 25ºC
11
5
60
12
5.5
13
70
14
6
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
35
30
25
20
15
10
80
70
60
50
40
30
20
10
5
0
0
-50
-50
0
Fig. 4. R
V
GS
Fig. 2. Extended Output Characteristics
3
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
6
DS(on)
vs. Junction Temperature
0
0
IXTH30N50L IXTQ30N50L
9
Case Temperature
T
T
C
Normalized to I
J
- Degrees Centigrade
V
25
25
- Degrees Centigrade
@ T
GS
V
12
DS
= 20V
- Volts
14V
12V
J
50
15
50
= 25ºC
I
D
= 30A
10V
9V
8V
7V
6V
18
75
75
D
IXTT30N50L
21
= 15A Value
100
100
I
D
24
= 15A
125
125
27
150
150
30