IXFH15N100P

Manufacturer Part NumberIXFH15N100P
DescriptionMOSFET N-CH 1000V 15A TO-247
ManufacturerIXYS
SeriesPolar™
IXFH15N100P datasheet
 


Specifications of IXFH15N100P

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs760 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C15AVgs(th) (max) @ Id6.5V @ 1mA
Gate Charge (qg) @ Vgs97nC @ 10VInput Capacitance (ciss) @ Vds5140pF @ 25V
Power - Max543WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.76 Ohms
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current15 APower Dissipation543 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)1000
Id(cont), Tc=25°c, (a)15Rds(on), Max, Tj=25°c, (?)0.76
Ciss, Typ, (pf)5140Qg, Typ, (nc)97
Trr, Typ, (ns)-Trr, Max, (ns)300
Pd, (w)543Rthjc, Max, (ºc/w)0.23
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Polar
Power MOSFET
TM
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AS
C
≤ I
≤ V
dV/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
Maximum lead temperature for soldering
L
T
Plastic body for 10s
SOLD
M
Mounting torque (TO-247)
d
F
Mounting force (PLUS 220)
C
Weight
TO-247
PLUS 220 types
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
V
= 0V, I
= 1mA
DSS
GS
D
V
V
= V
, I
= 1mA
GS(th)
DS
GS
D
= ± 30V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= 10V, I
= 0.5 • I
DS(on)
GS
D
© 2008 IXYS CORPORATION, All rights reserved
IXFH15N100P
IXFV15N100P
IXFV15N100PS
Maximum Ratings
1000
= 1MΩ
1000
GS
± 30
± 40
15
40
JM
7.5
500
≤ 150°C
15
J
543
-55 ... +150
150
-55 ... +150
300
260
1.13/10
11..65/2.5..14.6
6
4
Characteristic Values
Min.
Typ.
1000
3.5
T
= 125°C
J
, Note 1
670
D25
V
= 1000V
DSS
I
= 15A
D25
≤ ≤ ≤ ≤ ≤ 760mΩ Ω Ω Ω Ω
R
DS(on)
≤ ≤ ≤ ≤ ≤ 300ns
t
rr
PLUS220 (IXFV)
G
D
S
V
V
PLUS220SMD (IXFV_S)
V
V
A
G
S
A
A
TO-247 (IXFH)
mJ
V/ns
W
°C
°C
G = Gate
D
°C
S = Source
TAB = Drain
°C
Features
°C
International standard packages
Fast recovery diode
Nm/lb.in.
Unclamped Inductive Switching (UIS)
rated
N/lb.
Low package inductance
g
- easy to drive and to protect
g
Advantages
Easy to mount
Space savings
Max.
High power density
V
Applications:
6.5
V
Switched-mode and resonant-mode
± 100
nA
power supplies
μA
25
DC-DC Converters
1.0 mA
Laser Drivers
AC and DC motor controls
760 mΩ
Robotics and servo controls
D (TAB)
D (TAB)
D (TAB)
= Drain
DS99891A(4/08)

IXFH15N100P Summary of contents

  • Page 1

    ... GS(th ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXFH15N100P IXFV15N100P IXFV15N100PS Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 7.5 500 ≤ 150° 543 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65/2.5..14 Characteristic Values Min ...

  • Page 2

    ... D25 0.5 • DSS D D25 42 0.21 Characteristic Values Min. Typ. 0.6 7 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH15N100P IXFV15N100P IXFV15N100PS PLUS220 (IXFV) Outline Max Ω 0.23 °C/W °C/W Max TO-247 (IXFH) Outline 1.5 V 300 ns μ Dim ...

  • Page 3

    ... I - Amperes D © 2008 IXYS CORPORATION, All rights reserved V = 10V 10V 7.5A Value 125º 25º IXFH15N100P IXFV15N100P IXFV15N100PS Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.0 2 10V GS 2.6 2.4 2.2 2.0 1 15A D 1.6 1.4 1.2 1.0 ...

  • Page 4

    ... IXYS reserves the right to change limits, test conditions, and dimensions. = 125ºC J 25ºC - 40ºC 7.0 7.5 8.0 8 25ºC J 0.8 0.9 1.0 1.1 1.000 C iss 0.100 C oss C rss 0.010 IXFH15N100P IXFV15N100P IXFV15N100PS Fig. 8. Transconductance 40ºC J 25ºC 10 125º Amperes D Fig ...