IXFT30N60Q IXYS, IXFT30N60Q Datasheet
IXFT30N60Q
Specifications of IXFT30N60Q
Related parts for IXFT30N60Q
IXFT30N60Q Summary of contents
Page 1
... V = ± GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFH 30N60Q IXFT 30N60Q g Maximum Ratings 600 = 1 MΩ 600 GS ±20 ±30 30 120 1.5 ≤ DSS 500 -55 ... +150 150 -55 ... +150 ...
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... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. , pulse test 14 22 ...
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... Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs Amperes D © 2003 IXYS All rights reserved D25 25º 25º IXFH 30N60Q IXFT 30N60Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I Value vs. DS(on) D25 Junction Temperature 2 ...
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... V - Volts SD Fig. 11. Capacitance 1 0000 000 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5 25º iss C oss C rss 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...