IXFT30N60Q IXYS, IXFT30N60Q Datasheet - Page 4

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IXFT30N60Q

Manufacturer Part Number
IXFT30N60Q
Description
MOSFET N-CH 600V 30A TO-268(D3)
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFT30N60Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
500W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
1 00
80
70
60
50
40
30
20
1 0
60
50
40
30
20
1 0
0
0
0.2
Fig. 9. Source Current vs. Source-To-Drain
0
3
3.5
Fig. 7. Input Admittance
5
f = 1 M Hh
0.4
T
J
Fig. 11. Capacitance
= -40ºC
T
1 25ºC
1 0
J
25ºC
4
= 1 25ºC
0.6
V
4.5
V
1 5
V
SD
GS
DS
Voltage
- Volts
- Volts
0.8
- Volts
20
5
5.5
25
T
1
J
C
C
C
= 25ºC
iss
oss
rss
30
6
1 .2
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6.5
35
40
1 .4
7
60
50
40
30
20
0.01
1 0
0
1 0
0.1
8
6
4
2
0
1
0
0
Fig. 12. Maxim um T ransient T herm al
1
T
J
1 0
V
I
I
= -40ºC
Fig. 8. Transconductance
1 25ºC
D
G
D S
= 1 5A
= 1 0mA
25ºC
30
Puls e Width - millis ec onds
= 300V
20
Fig. 10. Gate Charge
Q
30
60
G
10
I
Resistance
D
- nanoCoulombs
- Amperes
40
90
50
IXFH 30N60Q
IXFT 30N60Q
60
1 20
100
70
1 50
6,534,343
80
1000
90
1 80

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