IXTK128N15 IXYS, IXTK128N15 Datasheet
IXTK128N15
Manufacturer Part Number
IXTK128N15
Description
MOSFET N-CH 150V 128A TO-264
Manufacturer
IXYS
Series
MegaMOS™r
Datasheet
1.IXTK128N15.pdf
(2 pages)
Specifications of IXTK128N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
128A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
128 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
128
Rds(on), Max, Tj=25°c, (?)
0.015
Ciss, Typ, (pf)
7000
Qg, Typ, (nc)
250
Trr, Typ, (ns)
150
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTK128N15
Manufacturer:
IXYS
Quantity:
18 000
High Current
Mega MOS
© 2003 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D(RMS)
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
D
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25 C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-264
Test Conditions
V
V
V
V
V
Pulse test, t
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C MOSFET chip capability
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V DC, V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
, di/dt 100 A/ s, V
GS
DSS
TM
, I
D
D
D
= mA
=
FET
300 s, duty cycle d
= 0.5 I
G
= 2
DS
A
D25
= 0
GS
= 1 M
DD
T
T
J
J
V
= 25 C
= 125 C
DSS
Advance Technical Information
,
JM
2 %
IXTK 128N15
150
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
0.7/6 Nm/lb.in.
150
150
128
512
540
150
300
2.5
20
30
75
90
60
10
5
100
Max.
4.0
50
15
2
V/ns
m
mA
mJ
nA
W
A
A
A
A
C
C
C
C
V
V
A
V
V
V
V
g
J
TO-264 AA (IXTK)
G = Gate
S = Source
Features
Applications
Advantages
V
R
I
International standard package
Low R
Rugged polysilicon gate cell structure
Fast switching times
D25
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
Motor controls
DSS
DS(on)
DC choppers
Switched-mode power supplies
DS (on)
G
D
HDMOS
S
= 150
= 128
=
D = Drain
TAB = Drain
TM
15 m
process
DS98952(03/03)
(TAB)
V
A
Related parts for IXTK128N15
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXTK128N15 Summary of contents
Page 1
... GS(th DC GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved Advance Technical Information IXTK 128N15 Maximum Ratings 150 = 1 M 150 128 75 512 2 DSS 540 -55 ... +150 150 -55 ... +150 300 0.7/6 Nm/lb.in. 10 Characteristic Values Min. Typ. ...
Page 2
... Pulse test, t 300 s, duty cycle 25A, -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max 6000 1700 680 ...