IXTK600N04T2 IXYS, IXTK600N04T2 Datasheet - Page 4

• Manufacturer Part Number: IXTK600N04T2
• Description: MOSFET N-CH 40V 600A TO-264
• Manufacturer: IXYS
• Series: TrenchT2™ GigaMOS™r
• Type: TrenchT2 GigaMOSr

Specifications of IXTK600N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 600A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 590nC @ 10V
• Input Capacitance (ciss) @ Vds: 40000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Product: MOSFET Gate Drivers
• Rise Time: 20 ns
• Fall Time: 250 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 1250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 90 ns
• Maximum Turn-on Delay Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 600 A
• Output Voltage: 40 V
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 600
• Rds(on), Max, Tj=25°c, (?): 0.0015
• Ciss, Typ, (pf): 40000
• Qg, Typ, (nc): 590
• Trr, Typ, (ns): 100
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
200
180
160
140
120
100
350
300
250
200
150
100
1.0
0.1
80
60
40
20
50
0
0
2.0
0.2
0
f
= 1 MHz
0.3
5
2.5
0.4
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
3.0
0.5
Fig. 11. Capacitance
T
15
J
Intrinsic Diode
= 150ºC
V
V
0.6
V
GS
SD
DS
3.5
- Volts
20
T
- Volts
- Volts
J
= 150ºC
0.7
- 40ºC
25ºC
25
C iss
C oss
4.0
C rss
0.8
T
J
= 25ºC
30
0.9
4.5
35
1.0
5.0
1.1
40
10,000
1,000
100
240
200
160
120
10
10
80
40
9
8
7
6
5
4
3
2
1
0
0
1
0
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
20
= 175ºC
= 300A
= 10mA
= 25ºC
= 20V
Fig. 12. Forward-Bias Safe Operating Area
100
40
R
DS(on)
Fig. 8. Transconductance
60
200
Fig. 10. Gate Charge
1
Limit
External Lead Limit
Q
80
G
I
- NanoCoulombs
D
V
- Amperes
DS
300
100
- Volts
IXTK600N04T2
IXTX600N04T2
120
T
J
400
= - 40ºC
10
140
25ºC
150ºC
160
500
DC
180
25µs
100µs
1ms
10ms
100ms
600
200
100