IXTH12N120 IXYS, IXTH12N120 Datasheet
IXTH12N120
Manufacturer Part Number
IXTH12N120
Description
MOSFET N-CH 1200V 12A TO-247
Manufacturer
IXYS
Datasheet
1.IXTH12N120.pdf
(4 pages)
Specifications of IXTH12N120
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
3400
Qg, Typ, (nc)
95
Trr, Typ, (ns)
850
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH12N120
Manufacturer:
IXYS
Quantity:
5 000
© 2004 IXYS All rights reserved
Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Mounting torque
J
J
C
C
C
C
C
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
GS
DSS
, I
D
D
DC
= 1 mA
D
= 250 µA
, V
= 0.5 • I
DS
= 0
GS
D25
= 1 MΩ
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
JM
IXTH 12N120
1200
min.
Characteristic Values
3
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
1200
1200
±30
±40
500
150
300
1.0
12
48
12
30
6
max.
±100
1.4
25
5
3
mJ
mA
nA
µA
°C
°C
°C
°C
Ω
W
V
V
V
V
V
V
A
A
A
g
J
Features
Applications
Advantages
TO-247 AD
G = Gate,
S = Source,
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
I
R
D (cont)
DSS
DS(on)
DS (on)
HDMOS
=
= 1200 V
=
D = Drain,
TAB = Drain
TM
1.4 Ω Ω Ω Ω Ω
process
DS98937E(04/04)
12 A
D (TAB)
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IXTH12N120 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXTH 12N120 Maximum Ratings 1200 = 1 MΩ 1200 ±30 ± 1.0 500 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values (T = 25° ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
Page 3
... V - Volts D S Fig Norm alize d to DS(on) 0.5 I Value vs. I D25 2.8 2 10V GS 2 1.8 1.6 1.4 1 Amperes D © 2004 IXYS All rights reserved º 6. º C 3.1 2 2.5 2.2 6.5V 1.9 1.6 6V 1.3 5.5V 0 125º 25º ...
Page 4
... Fig. 9. Source Current vs. Source -To-Drain Voltage 125º 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 25º 0.8 0.9 1 1.00 C iss C oss 0.10 C rss 0.01 25 ...