IXTH12N120 IXYS, IXTH12N120 Datasheet
IXTH12N120
Specifications of IXTH12N120
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IXTH12N120 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXTH 12N120 Maximum Ratings 1200 = 1 MΩ 1200 ±30 ± 1.0 500 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values (T = 25° ...
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... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
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... V - Volts D S Fig Norm alize d to DS(on) 0.5 I Value vs. I D25 2.8 2 10V GS 2 1.8 1.6 1.4 1 Amperes D © 2004 IXYS All rights reserved º 6. º C 3.1 2 2.5 2.2 6.5V 1.9 1.6 6V 1.3 5.5V 0 125º 25º ...
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... Fig. 9. Source Current vs. Source -To-Drain Voltage 125º 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 25º 0.8 0.9 1 1.00 C iss C oss 0.10 C rss 0.01 25 ...