IXTH12N120 IXYS, IXTH12N120 Datasheet - Page 4

• Manufacturer Part Number: IXTH12N120
• Description: MOSFET N-CH 1200V 12A TO-247
• Manufacturer: IXYS

Specifications of IXTH12N120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.4
• Ciss, Typ, (pf): 3400
• Qg, Typ, (nc): 95
• Trr, Typ, (ns): 850
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
16
14
12
10
36
33
30
27
24
21
18
15
12
10
8
6
4
2
0
9
6
3
0
4.5
0.4
0
f = 1MHz
5
0.5
T
5
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source -To-Drain Voltage
= 125ºC
10
-40ºC
T
25ºC
J
5.5
= 125ºC
0.6
V
V
15
V
G S
S D
D S
- Volts
- Volts
0.7
20
- Volts
6
25
0.8
6.5
T
J
30
= 25ºC
C iss
C oss
C rss
0.9
7
35
7.5
40
1
1.00
0.10
0.01
20
18
16
14
12
10
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
Fig. 12. Maxim um Trans ient Therm al
1
0
0
10
V
I
I
D
G
2
T
DS
Fig. 8. Trans conductance
J
= 6A
= 10mA
= -40ºC
125ºC
20
= 600V
25ºC
Fig. 10. Gate Charge
Pulse Width - milliseconds
4
Q
30
Resistance
10
G
6
I
- nanoCoulombs
D
40
- Amperes
8
50
IXTH 12N120
10
60
100
12
70
14
80
16
90
1000
100
18