IXFH15N100

Manufacturer Part NumberIXFH15N100
DescriptionMOSFET N-CH 1000V 15A TO-247
ManufacturerIXYS
SeriesHiPerFET™
IXFH15N100 datasheet
 


Specifications of IXFH15N100

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs700 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C15AVgs(th) (max) @ Id4.5V @ 4mA
Gate Charge (qg) @ Vgs220nC @ 10VInput Capacitance (ciss) @ Vds4500pF @ 25V
Power - Max360WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.7 Ohms
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current15 APower Dissipation360 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)1000
Id(cont), Tc=25°c, (a)15Rds(on), Max, Tj=25°c, (?)0.7
Ciss, Typ, (pf)4500Qg, Typ, (nc)220
Trr, Typ, (ns)-Trr, Max, (ns)200
Pd, (w)357Rthjc, Max, (ºc/w)0.35
Package StyleTO-247Lead Free Status / RoHS StatusLead free / RoHS Compliant
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TM
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
, HDMOS
rr
Preliminary data sheet
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
£ I
, di/dt £ 100 A/ms, V
dv/dt
I
S
DM
£ 150°C, R
= 2 W
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
M
Mounting torque
d
Weight
Symbol
Test Conditions
V
V
= 0 V, I
= 1 mA
DSS
GS
D
V
V
= V
, I
= 4 mA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 • I
DS(on)
GS
D
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
IXFH/IXFT/IXFX14 N100 1000 V
IXFH/IXFT/IXFX15 N100 1000 V
TM
Family
Maximum Ratings
1000
= 1 MW
1000
GS
±20
±30
14N100
14
15N100
15
14N100
56
JM
15N100
60
14N100
14
15N100
15
45
£ V
,
5
DD
DSS
360
-55 ... +150
150
-55 ... +150
300
1.13/10
6
Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min.
typ.
max.
1000
2.5
T
= 25°C
J
T
= 125°C
J
14N100
D25
15N100
V
I
DSS
D25
14 A 0.75 W
15 A 0.70 W
£ 200 ns
t
rr
TO-247 AD
(IXFH)
V
V
V
V
PLUS 247
TM
A
(IXFX)
A
A
A
A
A
G
D
mJ
TO-268 (D3)
V/ns
(IXFT)
W
G
S
°C
°C
Features
°C
International standard packages
Low R
HDMOS
°C
DS (on)
Rugged polysilicon gate cell structure
Nm/lb.in.
Unclamped Inductive Switching (UIS)
rated
g
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
V
power supplies
DC choppers
4.5
V
AC motor control
±100
nA
Temperature and lighting controls
mA
250
Advantages
1
mA
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
W
0.75
mounting clip or spring (PLUS 247
W
0.70
High power surface mountable package
High power density
R
DS(on)
(TAB)
(TAB)
(TAB)
TM
process
TM
)
97535B (1/99)
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IXFH15N100 Summary of contents

  • Page 1

    ... DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFT/IXFX14 N100 1000 V IXFH/IXFT/IXFX15 N100 1000 V TM Family Maximum Ratings 1000 = 1 MW 1000 GS ±20 ± ...

  • Page 2

    ... Pulse test, t £ 300 ms, duty cycle d £ -di/dt = 100 A/ms 100 TO-268AA (D PAK) © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 6 10 D25 4500 430 150 0.5 • DSS ...

  • Page 3

    ... 125 GS J 1.8 1.6 1.4 1 1.0 0 Amperes D Fig.3 R vs. Drain Current DS(on) 20 IXF_15N100 16 12 IXF_14N100 -50 - Degrees C C Fig.5 Drain Current vs. Case Temperature © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 100 125 150 IXFT14N100 IXFX15N100 IXFT15N100 IXFX14N100 125 Volts DS Fig.2 Output characteristics at elevated temperature 2 ...

  • Page 4

    ... 125 0.4 0.6 0.8 1 Volts SD Fig.9 Source current vs Source drain voltage. 1 0.1 0. Fig.10 Transient Thermal Impedance © 2000 IXYS All rights reserved IXFH14N100 IXFH15N100 5000 2500 1000 500 250 100 200 240 280 1.2 1.4 1 Pulse Width - Seconds IXFT14N100 IXFX15N100 IXFT15N100 ...