IXTK110N30 IXYS, IXTK110N30 Datasheet - Page 4

• Manufacturer Part Number: IXTK110N30
• Description: MOSFET N-CH 300V 110A TO-264
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTK110N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 390nC @ 10V
• Input Capacitance (ciss) @ Vds: 7800pF @ 25V
• Power - Max: 730W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.026 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 730 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 7800
• Qg, Typ, (nc): 390
• Trr, Typ, (ns): 350
• Pd, (w): 730
• Rthjc, Max, (k/w): 0.17
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
0.01
1 80
1 60
1 40
1 20
1 00
80
60
40
20
0.1
1 0
0
8
6
4
2
0
1
0
Fig. 11. Maximum Transient Thermal
0
1
T
J
V
I
I
D
G
Fig. 7. T ransconductance
30
= -40ºC
DS
= 60A
= 1 0mA
1 25ºC
Pulse Width - milliseconds
25ºC
= 1 50V
80
Fig. 9. Gate Charge
60
Q
G
1 0
Resistance
I
D
- nanoCoulombs
1 60
- Amperes
90
1 20
240
1 00
1 50
320
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
1 80
21 0
1 000
400
1 0000
1 000
200
1 00
1 75
1 50
1 25
1 00
75
50
25
0
Fig. 8. Source Current vs. Source-To-Drain
0.4
0
0.5
5
T
J
Fig. 10. Capacitance
= 1 25ºC
0.6
1 0
V
0.7
C
C
C
1 5
V
SD
iss
oss
rss
DS
Voltage
- Volts
0.8
20
- Volts
IXTK 110N30
0.9
25
T
J
= 25ºC
f = 1 M Hz
30
1
1 .1
35
6,534,343
1 .2
40