IXFK30N110P IXYS, IXFK30N110P Datasheet - Page 2

• Manufacturer Part Number: IXFK30N110P
• Description: MOSFET N-CH 1100V 30A TO-264
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFK30N110P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1100V (1.1kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 13600pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 1100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 960 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1100
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.36
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 235
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
Note 1:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
(T
S
SM
I
d(on)
r
d(off)
f
rr
RM
fs
SD
iss
oss
rss
GI
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Gate Input Resistance
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 20A, -di/dt = 100 A/μs
= 100 V, V
= 20V, I
= 1Ω (External)
= 10V, V
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
DS
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
= 0V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
(T
D25
J
D25
= 25°C unless otherwise specified)
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
15
13.6
1.50
0.15
1.8
Typ.
795
235
102
Typ.
13
6,162,665
6,259,123 B1
6,306,728 B1
70
50
48
83
52
79
25
0.13 °C/W
Max.
Max.
120
300
1.5
30
6,404,065 B1
6,534,343
6,583,505
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS 247
TO-264 (IXFK) Outline
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
A
A
A
b
b
b
C
D
E
e
L
L1
Q
Terminals: 1 - Gate
1
2
1
2
25.91
19.81
20.32
TM
20.80
15.75
19.81
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
Min.
Millimeter
5.46 BSC
Millimeter
5.45 BSC
(IXFX) Outline
7,005,734 B2
7,063,975 B2
2 - Drain (Collector)
3 - Source (Emitter)
26.16
19.96
20.83
IXFK30N110P
IXFX30N110P
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170