HAT2195R-EL-E Renesas Electronics America, HAT2195R-EL-E Datasheet
HAT2195R-EL-E
Specifications of HAT2195R-EL-E
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HAT2195R-EL-E Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... HAT2195R Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 4.6 m typ. ( DS(on) GS Outline SOP-8 8 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current ...
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... HAT2195R Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge ...
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... HAT2195R Typical Output Characteristics Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 160 120 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 12 Pulse Test 4 – Case Temperature Rev.3.00, Apr.01.2004, page Typical Transfer Characteristics 50 2 Pulse Test ...
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... HAT2195R Body Drain Diode Reverse Recovery Time 100 50 20 di/dt = 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics Gate Charge Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage Rev.3.00, Apr.01.2004, page 10000 3000 1000 300 100 MHz ...
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... HAT2195R Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 0.0001 10 100 1 m Avalanche Test Circuit V DS Monitor Rg Vin Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.3.00, Apr.01.2004, page f( ( 83.3°C/ 25°C When using the glass epoxy board (FR4 40x40x1 ...
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... Base material dimension Ordering Information Part Name Quantity HAT2195R-EL-E 2500pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Apr.01.2004, page 4.90 ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...