TPCA8003-H(TE12LQM Toshiba, TPCA8003-H(TE12LQM Datasheet - Page 5

• Manufacturer Part Number: TPCA8003-H(TE12LQM
• Description: MOSFET N-CH 30V 35A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8003-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1465pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0066 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
20
16
12
10
50
40
30
10
20
−80
0
8
4
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
I D = 35 A
Ta = 25°C
Pulse test
Common source
Pulse test
V GS = 4.5 V
V GS = 10 V
V DS
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
8
Dynamic input/output
Capacitance – V
0
1
characteristics
R
DS (ON)
16
V GS
40
I D = 35A,18A,9A
V DD = 6 V
– Ta
24
24
80
10
g
DS
DS
C oss
C rss
C iss
(nC)
18
12
32
°
(V)
120
C)
I D = 35A
9
100
160
40
20
16
12
8
4
0
5
1000
100
0.1
2.5
1.5
0.5
10
−80
1
2
1
0
0
Common source
Common source
V DS = 10 V
I D = 1 mA
Pulse test
10
Ta = 25°C
Pulse test
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
4.5
3
0
−0.4
1
I
DR
V
th
– V
40
– Ta
DS
−0.6
80
TPCA8003-H
DS
V GS = 0 V
−0.8
°
(V)
120
C)
2006-11-16
−1.0
160