TPCA8022-H(TE12LQM Toshiba, TPCA8022-H(TE12LQM Datasheet

TPCA8022-H(TE12LQM

Manufacturer Part Number

TPCA8022-H(TE12LQM

Description

MOSFET N-CH 100V 22A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8022-HTE12LQM.pdf (7 pages)

Specifications of TPCA8022-H(TE12LQM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

26 mOhm @ 11A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

22A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

38nC @ 10V

Input Capacitance (ciss) @ Vds

2330pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.026 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

22 A

Power Dissipation

45 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Switching Regulator Applications

Motor Drive Applications

DC/DC Converter Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High speed switching

Low drain-source ON-resistance

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

(Note 2a) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

DS (ON)

(Tc=25℃)

(Note 2a)

(Note 2b)

(t = 10 s)

= 2.0 to 4.0 V (V

(Note 1)

(Note 3)

= 10 µA (max) (V

= 17 mΩ (typ.) (V

TPCA8022-H

(Ta = 25°C)

Symbol

DGR

GSS

DSS

stg

| = 46 S (typ.)

= 10 V, I

= 100 V)

−55 to 150

=10V, I

Rating

100

±20

197

150

2.8

1.6

3.8

= 1 mA)

=11A)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3：SOURCE

5,6,7,8：DRAIN

1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8022-H

0.4±0.1

2-5Q1A

2007-02-09

―

0.8±0.1

4：GATE

0.05 M A

0.15±0.05

0.595

Unit: mm

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TPCA8022-H(TE12LQM Summary of contents

Page 1

... GSS 2 1 197 3 150 °C ch −55 to 150 T °C stg 1 TPCA8022-H Unit: mm 0.4±0.1 1.27 0. 0.15±0.05 4 0.595 1 A 5.0±0.2 0. 4.25±0 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 2007-02-09 ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) R 44.6 °C/W th (ch-a) R 78.1 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (Unit: mm) ( Ω， TPCA8022-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm 2007-02-09 ...

Page 3

... Duty < µ ∼ − gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8022-H Min Typ. Max Unit ⎯ ⎯ µA ±10 ⎯ ⎯ µA 10 ⎯ ⎯ 100 V ⎯ 2.0 4.0 V ⎯ mΩ ⎯ ⎯ ⎯ 2330 ⎯ ⎯ ...

Page 4

... Drain-source voltage 1.0 0.8 0.6 0.4 0 Gate-source voltage (ON) 100 Common source Ta = 25℃ Pulse test 100 0.1 1 Drain current I 4 TPCA8022-H – Common source Ta = 25°C 4.7 Pulse test 4.6 4 (V) DS – Common source Ta = 25°C Pulse test 5 (V) GS – ...

Page 5

... Total gate charge Q (nC 100 Common source Ta = 25°C Pulse test 10 10 4.5 1 0.1 −0.2 −0.4 0 160 Drain-source voltage V 6.0 4.5 3.0 Common source 1 Pulse test 0 −80 −40 100 0 Ambient temperature TPCA8022-H – −0.6 −0.8 −1.0 ( – 120 160 C) ° 2007-02-09 ...

Page 6

... I D max (Continuous =10ms * DC Operation 1 Tc=25℃ * Single - pulse 0.1 Ta=25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.01 0 Drain-source voltage V ( – Single - pulse 0 100 Pulse width t ( 160 Case temperature T 100 6 TPCA8022-H (2) (1) (3) 1000 – 120 160 ( C) ° C 2007-02-09 ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. 070122_C 021023_D 021023_B 060106_Q 7 TPCA8022-H 070122EAA 2007-02-09 ...

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