HAT2174H-EL-E Renesas Electronics America, HAT2174H-EL-E Datasheet - Page 6

• Manufacturer Part Number: HAT2174H-EL-E
• Description: MOSFET N-CH 100V 20A 5LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2174H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Gate Charge (qg) @ Vgs: 33.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2280pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

HAT2174H
Rev.4.00 Dec 11, 2006 page 4 of 7
100
100
250
200
150
100
Static Drain to Source on State Resistance
50
20
10
-25
80
60
40
20
50
0
0.1
0
50 V
V
Pulse Test
25 V
I
V
Reverse Drain Current
D
DD
Case Temperature
Dynamic Input Characteristics
GS
= 20 A
0.3
0
Body-Drain Diode Reverse
= 100 V
10 V
Gate Charge
= 8 V
16
V
DD
25
V
vs. Temperature
DS
= 25 V
Recovery Time
100 V
1
50 V
32
50
di / dt = 100 A / µs
V
3
GS
75
= 0, Ta = 25°C
48
Qg (nc)
2 A, 5 A, 10 A
10
5 A, 2 A
100 125 150
Tc
I
D
I
64
= 10 A
DR
30
(°C)
V
GS
(A)
100
80
20
16
12
8
4
0
10000
3000
1000
1000
100
300
100
300
100
0.3
0.1
30
10
30
10
30
10
3
1
0.1 0.2
0.1
3
0
Drain to Source Voltage V
t d(on)
Forward Transfer Admittance vs.
t r
0.3
Tc = -25°C
Switching Characteristics
10
Drain to Source Voltage
Typical Capacitance vs.
0.5
Drain Current
Drain Current I
1
Drain Current
1
V
Rg = 4.7 Ω, duty ≤ 1 %
GS
20
t d(off)
2
25°C
= 10 V, V
3
5
30
V
Pulse Test
10
10
I
75°C
D
D
DS
DD
V
f = 1 MHz
(A)
20
GS
= 10 V
= 30 V
(A)
40
30
DS
t f
= 0
Coss
Ciss
Crss
50
(V)
50
100
100