2SK4114(Q,T) Toshiba, 2SK4114(Q,T) Datasheet

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2SK4114(Q,T)

Manufacturer Part Number
2SK4114(Q,T)
Description
MOSFET N-CH 600V 10A SC-67
Manufacturer
Toshiba
Datasheet

Specifications of 2SK4114(Q,T)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
2-10R1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PRODUCT GUIDE
MOSFETs
S E M I C O N D U C T O R
S E M I C O N D U C T O R
S E M I C O N D U C T O R
http://www.semicon.toshiba.co.jp/eng
2009-5

Related parts for 2SK4114(Q,T)

2SK4114(Q,T) Summary of contents

Page 1

... PRODUCT GUIDE MOSFETs http://www.semicon.toshiba.co.jp/eng 2009-5 ...

Page 2

... Toshiba’s MOSFET devices meet the needs of a wide range of ultra-high-density applications Features and Structures ....................................................................... 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes ........ 4 2-1 MOSFET Product Lines ................................................................................... 4 2-2 Part Numbering Schemes ................................................................................ 5 3 Selection Guide (By Absolute Maximum Ratings) ............................. 6 MOSFETs (in Small SMD Packages) ................................. 16 ...

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... Reduced end-product size Reduced end product’s power ● π-MOS Toshiba Power MOSFETs use a double-diffusion MOS (D-MOS) structure, which produces high-withstand voltage, to form channels. This structure is especially well suited to high-withstand voltage and high-current devices. A high level of integration yields a high-performance Power MOSFET with low ON-resistance and low power loss. ● ...

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... Toshiba’s MOSFET Product Lines and Part Numbering 2-1 MOSFET Product Lines SSM Series ( DSS Very compact and thin, the SSM Series is suitable for use in various electronic devices. The SSM Series is available in a wide range of packages and features low voltage drive. ...

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Schemes 2-2 Part Numbering Schemes ■ Small-Signal MOSFET (SSM) Series SSM 3 K 101 TU Serial number of the products Polarity and internal configuration K: N-channel, single J: P-channel, single N: N-channel, dual P: P-channel, dual L: N-channel and P-channel ...

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Selection Guide (By Absolute Maximum Ratings) V (V) DSS (A) D 2SJ343(50)➀ 0.05 2SJ344(50)➀ SSM3K04FU(12)➂ SSM3K16FU(15)➂ SSM3J16FU(45)➂ SSM3K04FS(12)➂ SSM3K16FS(15)➂ SSM3J16FS(45)➂ SSM3J35FS(44)➅ SSM3K15F(7)➂ SSM3K03FV(12)➂ SSM3J15F(32)➂ SSM3K04FV(12)➂ SSM3K15FU(7)➂ SSM3K16FV(15)➂ SSM3J15FU(32)➂ SSM3J16FV(45)➂ SSM3K15FS(7)➂ SSM3J35MFV(44)➅ SSM3J15FS(32)➂ SSM3K16CT(15)➂ ...

Page 7

Selection Guide (By Absolute Maximum Ratings) V (V) DSS ( SSM5G02TU(0.16)➅ SSM3J111TU(0.48)➅ PS SSM5G01TU(0.8)➅ PS SSM5G04TU(0.24)➅ SSM3J46CTB(0.103)➅ SSM6E01TU(0.16)➅ 1.1 SSM6K06FU(0.16)➂ SSM3J112TU(0.79)➅ SSM6J23FE(0.16)➅ SSM3K106TU(0.53)➆ SSM6P54TU(0.228)➅ 1.2 NS SSM5H07TU(0.54)➆ SSM6K31FE(0.54)➆ SSM6K30FE(0.42)➆ ...

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Selection Guide (By Absolute Maximum Ratings) V (V) DSS (A) SSM3K123TU(0.028)➅ TPCP8201 (0.05)➅ 4.2 SSM6K403TU(0.028)➅ TPCP8402 (0.077)➅ SSM3K320T(0.077)➅ 4.4 SSM3J130TU(0.0258)➅ SSM6K406TU(0.0385)➅ TPC6107 (0.055)➅ TPC6108 (0.06)➅ 4.5 TPC8405 (0.033)➅ 4.6 SSM3J129TU(0.046)➅ SSM3K309T(0.031)➅ ...

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Selection Guide (By Absolute Maximum Ratings) V (V) DSS ( TPC8025 (0.009)➅ N TPC8050-H (0.0145)➅ N TPC8021-H (0.017)➅ N TPC8014 (0.014)➅ P TPC8111 (0.012)➅ P TPC8113 (0.01)➅ P TPCS8105 (0.0135)➅ 11 ...

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Selection Guide (By Absolute Maximum Ratings) V (V) DSS ( TPCM8004-H (0.011)➅ N TPCA8050-H (0.0142)➅ N TPCA8030-H (0.011)➅ TPCA8031-H (0.011)➅ NS TPCC8006-H (0.086)➅ N TPCC8008 (0.007)➅ 2SK2507 (0.046)➃ 2SK2232 ...

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Low-V MOSFETs (in Small SMD Packages) DSS 4-1 Packaging Options SSM Series The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help reduce system size. CST3 CST3B Chip-Scale Package, Transfer Molded, 3-Pin ...

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Application Examples and Block Diagrams Cell Phone (Power Supply Circuit) Battery charger USB charging Power management switches P-ch: SSM3J114TU P-ch: SSM3J115TU Notebook PC (Power Supply Circuit) Power management switches Adapter P-ch: TPC8121 / 8118 / 8123 Input N-ch: TPC8030 ...

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Low-V MOSFETs (in Small SMD Packages) DSS 4-2 Application Examples and Block Diagrams Lithium-Ion Secondary Battery Protection Circuits Cell Phones P+ Dual N-ch MOSFET • STP2 Series • PS-8 (dual) • Chip LGA Motor Driver (Power Driver Circuit) Notebook ...

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Low-V MOSFET Roadmaps DSS Roadmap for Trench MOSFETs ■ High-Speed, Low-V U-MOS DSS 30 N-ch (mΩ) DS(ON) Package Options 100 10 CST3B 1 CST4 CST3 0.1 0.1 ■ Low-Ron Trench MOSFETs ...

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Low-V MOSFETs (in Small SMD Packages) DSS ■ Ultra-Small Packages S-Mini USM 2.5 mm 2.1 mm 0.425 mm 0.5 mm Footprint 2 2 7.3 mm 4.2 mm Area Permissible Power 0.2 W 0.2 W Dissipation Height 1.4 mm 1.1 ...

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Low-V , High-Speed MOSFETs DSS Synchronous Rectification DC-DC Converters – ■ Block Diagram Control IC-side Synchronous-side (switch and high-side) (low-side) MOSFETs MOSFET Vin G D Control IC C Vcc G S High-side MOSFET: Turn-off loss High-side ...

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... Synchronous Rectification DC-DC Converters – ■ Thermally Enhanced Package Toshiba has developed the SOP Advance package with the same footprint area as the standard SOP-8 package. With an external heatsink on the bottom, the SOP Advance package offers enhanced thermal characteristics, realizing a high power dissipation and thus high-current capability ...

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Synchronous Rectification DC-DC Converters – ■ External SBD ● Low-side MOSFET turned on Current When an SBD is added externally, the SBD can’t function fully due to the influence of wire inductances (Ls and L diode current during the dead ...

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Low-V MOSFETs (in Small SMD Packages) DSS High-Speed MOSFET Offerings Absolute Maximum Ratings Part Number V (V) V DSS GSS ±12 TPCA8011-H 20 TPC6007-H 30 TPC6109-H –30 TPC8216-H TPCP8005-H ✩ TPCC8001-H ✩ TPCC8003-H ✩ TPCC8002-H ✩ TPCC8006-H ✩ TPCC8005-H ...

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Absolute Maximum Ratings Part Number V (V) V (V) DSS GSS TPC8213-H TPC8053-H ✩ TPC8050-H ✩ TPC8049-H ✩ TPC8048-H ✩ 60 TPCA8053-H ✩ TPCA8050-H ✩ TPCA8016-H TPCA8049-H ✩ TPCA8048-H ✩ TPC8051-H ✩ 80 TPCA8051-H ✩ TPCP8003-H TPC8214-H 100 TPCA8022-H TPCS8009-H ...

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Low-V MOSFETs (in Small SMD Packages) DSS 4-5 Low-V , Low-R DSS Lithium-Ion Battery Protection Circuit Trend Lithium-Ion Secondary Battery Protection PCM LiB MOSFET Roadmap 2003 2004 SOP Advance SOP-8 P-ch U-MOSIV STP TSSOP-8 N-ch MOSFETs (for Lithium-Ion Battery ...

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Low-ON-resistance N-Channel Power MOSFETs Absolute Maximum Ratings Part Number V (V) V DSS GSS TPCT4203 ✩ ±12 20 TPCT4204 ✩ ±12 30 TPCL4201 ✩ ±12 20 TPCL4203 ✩ ±12 24 TPCL4202 ✩ 30 ±12 30 ±12 TPCP8202 TPCP8006 ✩ 20 ...

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Low-V MOSFETs (in Small SMD Packages) DSS 4-6 Semi-Power MOSFET Offerings Semi-Power P-Channel Single MOSFETs V V DSS GSS Package Part Number (V) (V) CST3B SSM3J46CTB –20 ±8 0.8 0.48 SSM6J53FE –20 ±8 SSM6J206FE –20 ±8 ES6 (SOT-563) SSM6J205FE ...

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Semi-Power N-Channel Single MOSFETs V V DSS GSS Package Part Number (V) (V) CST4 SSM4K27CT 20 ±12 0.8 0.38 SSM6K211FE 20 ±10 SSM6K203FE 20 ±10 SSM6K202FE 30 ±12 ES6 SSM6K204FE 20 ±10 (SOT-563) SSM6K208FE 30 ±12 SSM6K25FE 20 ±12 SSM6K24FE ...

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Low-V MOSFETs (in Small SMD Packages) DSS Semi-Power Dual MOSFETs Package Polarity Part Number ES6 (SOT-563) P- SSM6P41FE 0.55 1.6 SSM6N39TU SSM6N29TU SSM6N25TU N- SSM6N24TU SSM6N40TU SSM6P54TU SSM6P39TU SSM6P28TU P- SSM6P26TU SSM6P25TU SSM6P40TU ...

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MOSFET with a Schottky Barrier Diode Package Polarity Part Number V DSS (V) SMV N-ch+ 30 SSM5H14F SBD 2.9 1.1 VS-6 Series … [Part Number: TPC6xxx] ■ Features • Zener diode between gate and source for all products • Thin ...

Page 27

... No protection Zener diode between gate and source STP2 Series ... [Part Number: TPCT4xxx] ■ Features • The combination of a new chip design using Toshiba U-MOSIV process technology and a new small pump-structured package, offers low ON-resistance. ■ Product Offerings Absolute Maximum Ratings ...

Page 28

TSSOP-8 Series … [Part Number: TPCS8xxx] ■ Features • Common-drain types are available: Ideal for lithium-ion battery protection and reverse-current prevention ■ Product Offerings Absolute Maximum Ratings Part Number V (V) V DSS GSS TPCS8004 200 ±20 TPCS8009-H 150 ±20 ...

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Low-V MOSFETs (in Small SMD Packages) DSS ■ Product Offerings Absolute Maximum Ratings Part Number V ( (A) DSS GSS D TPC8028 ✽✩ ± TPC8029 ✽✩ ± TPC8036-H ✽✩ ± TPC8034-H ...

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SOP Advance Series … [Part Number: TPCA8xxx] ■ Features • Low ON-resistance and high-speed-switching series are available. Low ON-resistance series: UMOSIV/V High-speed-switching series: U-MOSIII-H • High-current, thin and thermally enhanced package ■ Product Offerings Absolute Maximum Ratings Part Number V ...

Page 31

Low-V MOSFETs (in Small SMD Packages) DSS 4-7 Standard MOSFET Series (I Single MOSFETs Absolute Maximum Ratings S-Mini USM (SOT-346) (SOT-323) 2925 size, 3-pin 2021 size, 3-pin Polarity DSS GSS D (V) (V) (mA) 20 ±10 ...

Page 32

Low-V High-Q DSS, 5-1 TO-220SM(W) Series The TO-220SM(W) package, which uses Cu connectors and a wide source terminal, realizes low ON-resistance and a high current-carrying capability. ■ Features • Achieves low ON-resistance, low package inductance and low thermal resistance ...

Page 33

Low-V High-Q DSS, 5-2 U-MOS (Trench Type) Series Fabricated using a trench structure, the U-MOS Series ultra-high integration density and thus Planar Structure Source Drain ■ Features • High density through the ...

Page 34

U-MOS Series for Synchronous Rectification (V Fabricated using a trench technology, the U-MOS Series is ideal for synchronous rectification on the secondary side of power supply circuits. ■ Features • Low ON-resistance achieved by high density through the use ...

Page 35

Mid- and High-V 6-1 π-MOSVII Series (V The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip design and is available with a greatly wider range of electrical characteristics. ■ Features • ...

Page 36

Super-Junction DTMOS Series (V The DTMOS devices employ a new super-junction structure that enables an ultra-low ON-resistance with the maximum V rating of 600 V. The DTMOS Series helps reduce the power consumption and size of electronic equipment. ■ ...

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... Mid- and High-V 6-3 High-speed π-MOS Series (V To support the development of high-efficiency equipment, Toshiba has developed two series of high-speed power MOSFETs: a high-speed switching series for AC adapters and switching power supplies; and a high-speed diode series for motor controllers and inverter circuits. ...

Page 38

Series ■ π-MOSVI Series (V = 450 V to 600 V) DSS Absolute Maximum Ratings Series Part Number V (V) DSS 2SK3757 2SK3766 2SK3869 450 2SK3935 2SK3904 2SK3563 2SK3863 2SK4103 2SK3561 2SK3568 500 2SK4012 VI π-MOS 2SK3934 2SK4107 ...

Page 39

Mid- and High DSS D D Part Number (V) (A) (W) 2SK2615 60 2 0.5 2SK2961 60 2 0.9 2SK2229 60 5 1.2 2SK2782 2SK2232 2SK2311 2SK2385 ...

Page 40

Series (V = 400 V to 700 V) DSS Absolute Maximum Ratings Applications Part Number V 2SK3498 2SK2838 2SK2679 2SK2952 2SK2841 2SK2949 2SK3499 2SK3472 2SK3374 2SK4023 2SK3544 2SK2998 2SK3302 2SK3471 2SK2599 2SK3373 2SK2862 2SK2991 2SK3466 2SK2542 2SK2776 2SK3538 ...

Page 41

MOSFET Part Numbers 7-1 Alphanumeric Index of Part Numbers Main Characteristics V Part Number Series Package DSS (V) 2SJ168 S-MINI –60 πMOS-III 2SJ200 TO-3P (N) –180 π-MOSII 2SJ201 TO-3P (L) –200 π-MOSII 2SJ304 2 TO-220NIS –60 L -π-MOSIV 2SJ305 ...

Page 42

Main Characteristics V Part Number Series Package DSS (V) π-MOSV 2SK2835 TPS 200 π-MOSV 2SK2838 TO-220FL/SM 400 π-MOSV 2SK2841 TO-220AB 400 π-MOSIII 2SK2845 DP 900 π-MOSV 2SK2846 TPS 600 2SK2847 π-MOSIII TO-3P (N)IS 900 2SK2862 π-MOSV TO-220NIS 500 2SK2865 π-MOSV ...

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MOSFET Part Numbers Main Characteristics V Part Number Series Package DSS (V) 2SK3845 TO-3P (N) 60 U-MOSIII 2SK3846 TO-220NIS 40 U-MOSIII 2SK3847 TO-220SM 40 U-MOSIII 2SK3863 DP 500 π-MOSVI 2SK3868 TO-220SIS 500 π-MOSVI (HSD) 2SK3869 TO-220SIS 450 π-MOSVI 2SK3878 ...

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Main Characteristics V Part Number Series Package DSS (V) U-MOSIII SSM3K116TU UFM 30 U-MOSIII SSM3K119TU UFM 30 U-MOSIII SSM3K121TU UFM 20 U-MOSIII SSM3K122TU UFM 20 U-MOSIII SSM3K123TU UFM 20 SSM3K124TU π-MOSVII UFM 30 U-MOSIII SSM3K127TU UFM 30 U-MOSIII SSM3K128TU UFM ...

Page 45

MOSFET Part Numbers Main Characteristics V Part Number Series Package DSS (V) SSM6K404TU UF6 20 U-MOSIII SSM6K405TU UF6 20 U-MOSIII SSM6K406TU UF6 30 U-MOSIV SSM6K407TU UF6 60 π-MOSV SSM6L05FU US6 20 π-MOSVI SSM6L09FU US6 30 π-MOSVI SSM6L10TU U-MOSIII UF6 ...

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Main Characteristics V Part Number Series Package DSS (V) U-MOSIII TK50F15J1 TO-220SM(W) 150 U-MOSVI-H TK50P03M1 D-PAK 30 U-MOSVI-H TK50P04M1 D-PAK 40 U-MOSIII-H TK50X15J1 TFP 150 U-MOSIII-H TK55A10J1 TO-220SIS 100 TK55D10J1 U-MOSIII-H TO-220(W) 100 π-MOSVII TK5A50D TO-220SIS 500 π-MOSVII TK5A55D TO-220SIS ...

Page 47

MOSFET Part Numbers Main Characteristics V Part Number Series Package DSS (V) TPCA8020-H SOP Advance 40 U-MOSIII-H TPCA8022-H SOP Advance 100 U-MOSIII-H TPCA8023-H SOP Advance 30 U-MOSV-H TPCA8024 SOP Advance 30 U-MOSIV TPCA8025 SOP Advance 30 U-MOSIV TPCA8026 SOP ...

Page 48

Product Obsolescence 8-1 End-of-Life Products The part numbers in the left-hand column below are end-of-life or obsolete products. When ordering, please choose from the replacement products in the right-hand column. End-of-Life Products Electrical Characteristics Part Number ...

Page 49

Product Obsolescence End-of-Life Products Electrical Characteristics Part Number DSS D DS(ON) (V) (A) Max(Ω) 30 2SK2964 2 0.18 600 2SK3067 2 5 100 2SK3084 30 0.046 30 2SK3089 40 0.03 30 2SK3090 45 0.02 30 2SK3125 ...

Page 50

... Packaging 9-1 Compact Surface-Mount Packages Toshiba offers a broad range of packaging options suitable for various mobile applications, including ultra-small, thin packages; those specifically designed for lithium-ion battery protection circuits; high-current packages with a thermal fin on the bottom. ■ CST3 Package dimensions 0.6 0.05 ...

Page 51

Packaging 9-1 Compact Surface-Mount Packages ■ VESM (SOT-723) Package dimensions 1.2 ± 0.05 0.8 ± 0. ■ SSM (SOT-416)(SC-75) Package dimensions 1.6 ± 0.2 0.8 ± 0 0.1 ■ USM (SOT-323)(SC-70) ...

Page 52

UFM Package dimensions 2.1 ± 0.1 1.7± 0 ■ S-Mini (SOT-346)(SC-59) Package dimensions 2.5 + 0.5 - 0.3 1.5 + 0. 0.1 ■ TSM Package dimensions 2.8 + 0.2 ...

Page 53

Packaging ■ CST4 Package dimensions 0.8 ± 0.05 0.5 0.05 ± 0.04 0.2 ± 0.02 ■ ESV (SOT-553) Package dimensions 1.6 ± 0.05 1.2 ± 0. ■ USV (SOT-353)(SC-88A) Package dimensions 2.1 ± 0.1 1.25 ± ...

Page 54

UFV Package dimensions 2.1 ± 0.1 1.7 ± 0 ■ SMV (SOT-25)(SC-74A) Package dimensions + 0.2 2.8 - 0.3 + 0.2 1 0.1 ■ CST6D Package dimensions 1.0 ...

Page 55

Packaging ■ ES6 (SOT-563) Package dimensions 1.2 ± 0. 1.6 ± 0.05 ■ US6 (SOT-363)(SC-88) Package dimensions 2.1 ± 0.1 1.25 ± 0 0.1 ■ UF6 Package dimensions 2.1 ± 0.1 ...

Page 56

VS-6 Package dimensions 0.3±0.1 0.95 2.9±0.2 0.25 -0.15 0.05 ■ VS-8 Package dimensions 2.9±0.1 0.3+0.1/ –0.05 0.025 0.65 0. 0.475 ■ PS-8 Package dimensions 0.33 ± 0.05 0.05 M ...

Page 57

Packaging ■ TSON Package dimensions 0.65 ± 0.05 0.575 ± 0 3.1 0.1 ± 3.3 0.3 ± 0.3 ± 0.05 2.49 0.05 ± ■ STP2 Package dimensions 3.8 ± 0.1 1 0.375 0.375 2 0.025 ...

Page 58

TSSOP Advance Package dimensions ± 0.25 0.05 0.8 0. ± 3.5 0.2 0. 2.75 ± 0 ± 0.8 ■ TSSOP-8 Package dimensions 8 5 0.25 ± 0.05 (0.525) 1 ...

Page 59

Packaging ■ SOP Advance Package dimensions 0.4±0.1 1.27 0. 0.15±0. 0.595 5.0±0 4.25±0 0.8±0.1 ■ PW-Mini +0.08 0.45 -0.05 +0.08 0.4 -0.05 1.5 ± 0 Gate ...

Page 60

New PW-Mold 0.8 max 0.6 ± 0. Gate 2. Drain (Heatsink) 2.3 ± 0.15 3. Source ■ TO-220SM 2.54 ± 0.25 1. Gate 2. Drain (Heatsink) 3. Source ■ TO-220SM(W) 10.0 ± 0.3 9.5 ± 0.2 0.76 ...

Page 61

Packaging ■ TFP 1 2.0 1.5 2 Drain (Heatsink) 1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2 2. Gate 3. Source 1 4. Source 2 9-2 Through-Hole Packages ■ LSTM 0.75 max 1.0 max 0.8 max ...

Page 62

TPS 1.4 ± 0.1 1.05 ± 0.1 0.5 + 0.15 - 0.05 2.5 ± 0.5 1. Source 2. Drain 3. Gate ■ TO-220(W) 1.1 ± 0.15 0.62 ± 0.15 ø 0.2 M 2.54 1. Drain 2. Source 3. Gate ...

Page 63

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise ...

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