2SK3994(Q,T) Toshiba, 2SK3994(Q,T) Datasheet - Page 4

• Manufacturer Part Number: 2SK3994(Q,T)
• Description: MOSFET N-CH 250V 20A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3994(Q,T)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2090pF @ 10V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: 2-10R1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

30000
10000
1000
0.24
0.18
0.12
0.06
100
0.3
10
−80
0
0.1
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
Drain−source voltage V
Case temperature Tc (°C)
1
Capacitance – V
0
R
DS (ON)
40
10
I D = 20 A
– Tc
80
DS
DS
100
10
(V)
120
C oss
C rss
C iss
5
1000
160
4
1000
100
250
200
150
100
10
50
−80
1
6
5
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
V DS
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Dynamic input/output characteristics
−40
5
10
Drain−source voltage V
20
V GS
Total gate charge Q
Case temperature Tc (°C)
50 V
3
0
40
I
DR
V
V GS = 0 V
th
100 V
V DD = 200 V
– V
40
– Tc
DS
60
g
80
Common source
I D = 20 A
Tc = 25°C
Pulse test
−1.4
DS
(nC)
−1.6
(V)
80
120
−1.8
2009-09-29
2SK3994
−2.0
100
160
20
16
12
8
4
0