HAT2169H-EL-E Renesas Electronics America, HAT2169H-EL-E Datasheet
HAT2169H-EL-E
Specifications of HAT2169H-EL-E
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HAT2169H-EL-E Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... HAT2169H Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.8 m typ. ( DS(on) GS Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 Absolute Maximum Ratings Item Drain to source voltage ...
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... HAT2169H Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance ...
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... HAT2169H Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 100 10 V Pulse Test 4 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 200 150 100 Gate to Source Voltage Rev.4.00 Sep 20, 2005 page 0.01 150 ...
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... HAT2169H Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics Gate Charge Rev.4.00 Sep 20, 2005 page 100 125 150 10000 = 100 I ( 120 160 200 Qg (nc) Forward Transfer Admittance vs. ...
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... HAT2169H Reverse Drain Current vs. Source to Drain Voltage 100 0.4 0.8 1.2 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 10 Avalanche Test Circuit V DS Monitor Rg Vin Rev.4.00 Sep 20, 2005 page 100 Pulse Test 1.6 2.0 V (V) SD Normalized Transient Thermal Impedance vs. Pulse Width ...
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... HAT2169H Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.4.00 Sep 20, 2005 page Vout Monitor R Vin L Vout d(on) Switching Time Waveform 90% 10% 10% 10% 90% 90 d(off ...
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... JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A 1 Ordering Information Part Name HAT2169H-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 20, 2005 page Package Name MASS[Typ.] LFPAK 0 ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...