2SK3399(Q) Toshiba, 2SK3399(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK3399(Q)
• Description: MOSFET N-CH 600V 10A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3399(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(Gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3399
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4: A line under a Lot No. identifies the indication of product
V
I
V
I
V
V
V
V
V
G
D
V
Duty < = 1%, t
GS
DS
DS
GS
DS
DS
V
DD
IN
= ±10 μA, V
= 10 mA, V
GS
10 V
I
I
dI
: t
DR
DR
= 600 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±25 V, V
= 10 V, I
∼ − 400 V, V
0 V
DR
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
r
, t
2
= 10 A, V
= 10 A, V
(Ta = 25°C)
f
/dt = 100 A/μs
< 5 ns
Test Condition
w
D
D
D
GS
GS
DS
Test Condition
= 10 μs
GS
= 1 mA
= 5 A
DS
= 5 A
GS
= 0 V
GS
GS
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
I
= 10 V, I
D
⎯
⎯
= 0 V
= 0 V,
= 5 A
V
DD
D
R
= 10 A
∼ − 200 V
L
= 40 Ω
V
OUT
600
Min
±30
Min
3.0
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1750
1300
Typ.
0.54
Typ.
170
5.2
11
15
40
35
35
15
20
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
2009-09-29
2SK3399
0.75
−1.7
Max
Max
±10
100
5.0
⎯
⎯
⎯
⎯
⎯
10
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V