2SJ162-E Renesas Electronics America, 2SJ162-E Datasheet - Page 5

• Manufacturer Part Number: 2SJ162-E
• Description: MOSFET P-CH 160V 7A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SJ162-E

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 160V
• Current - Continuous Drain (id) @ 25° C: 7A
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -

2SJ160, 2SJ161, 2SJ162
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 5
–0.5
–0.2
–0.1
–10
150
100
–10
–5
–2
–1
50
–8
–6
–4
–2
–0.1
0
0
Drain to Source Saturation Voltage vs.
0
0
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
–0.2
–9
–10
–8
Drain Current
–7
–6
–0.5
50
–5
Drain Current
–20
25°C
–4
–1
–3
–30
Tc = –25°C
75°C
–2
100
I
D
Tc (°C)
Tc = 25°C
V
(A)
–2
V
–40
GD
DS
V
–5
GS
= 0 V
–1 V
= 0
(V)
150
–50
–10
–0.5
–0.2
–1.0
–0.8
–0.6
–0.4
–0.2
–20
–10
–10
–5
–2
–1
–8
–6
–4
–2
0
0
–5
0
0
Gate to Source Voltage
Drain to Source Voltage
I
Gate to Source Voltage
(–14.3 V,
D
–7 A)
Typical Transfer Characteristics
V
max (Continuous)
Maximum Safe Operation Area
DS
–10 –20
Drain to Source Voltage vs.
–0.4
–2
Gate to Source Voltage
= –10 V
(–120 V, –0.83 A)
Tc = –25°C
–0.8
–4
–50 –100 –200
–1.2
–6
I
Pulse Test
Ta = 25°C
D
V
V
–1.6
V
= –1 A
–8
GS
(–140 V, –0.71 A)
(–160 V, –0.63 A)
GS
DS
75°C
–5 A
–2 A
25°C
2SJ160
2SJ161
2SJ162
(V)
(V)
(V)
–500
–2.0
–10