2SK3131(Q) Toshiba, 2SK3131(Q) Datasheet

2SK3131(Q)

Manufacturer Part Number

2SK3131(Q)

Description

MOSFET N-CH 500V 50A TO-3P(L)

Manufacturer

Toshiba

Datasheet

1.2SK3131Q.pdf (6 pages)

Specifications of 2SK3131(Q)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

110 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

50A

Vgs(th) (max) @ Id

3.4V @ 1mA

Gate Charge (qg) @ Vgs

280nC @ 10V

Input Capacitance (ciss) @ Vds

11000pF @ 10V

Power - Max

250W

Mounting Type

Through Hole

Package / Case

TO-3P(L) (2-21F1B)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.11 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

50 A

Power Dissipation

250 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 6
Download datasheet (426Kb)

Chopper Regulator DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Fast reverse recovery time

Built-in high-speed free-wheeling diode

Low drain−source ON-resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

DC Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

DD =

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

90 V, T

Pulse (Note 1)

= 20 kΩ)

: I

: V

= 25°C (initial), L = 357 μH, R

(Note 1)

(Note 2)

DSS

= 2.4 to 3.4 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: t

: R

: |Y

DGR

GSS

DSS

Symbol

stg

th (ch−a)

th (ch−c)

DS (ON)

2SK3131

= 105 ns (typ.)

| = 35 S (typ.)

= 0.085 Ω (typ.)

= 10 V, I

−55 to 150

Rating

500

±30

200

250

525

150

= 500 V)

35.7

Max

0.5

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 50 A

Weight: 9.75 g (typ.)

JEDEC

JEITA

TOSHIBA

2-21F1B

2010-01-29

—

2SK3131

Unit: mm

Related parts for 2SK3131(Q)

2SK3131(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK3131 2010-01-29 ...

Page 4

4 2SK3131 2010-01-29 ...

Page 5

Ω 357 μ 2SK3131 1 ⎛ B ⎞ VDSS 2 = ⋅ L ⋅ I ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords

2sk313
2sk317
2sk3131
2SK3131(Q) datasheet
2SK3131(Q) data sheet
2SK3131(Q) pdf datasheet
2SK3131(Q) component
2SK3131(Q) part
2SK3131(Q) distributor
2SK3131(Q) RoHS
2SK3131(Q) datasheet download