2SK3132(Q) Toshiba, 2SK3132(Q) Datasheet

2SK3132(Q)

Manufacturer Part Number

2SK3132(Q)

Description

MOSFET N-CH 500V 50A TO-3P(L)

Manufacturer

Toshiba

Datasheet

1.2SK3132Q.pdf (6 pages)

Specifications of 2SK3132(Q)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

95 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

50A

Vgs(th) (max) @ Id

3.4V @ 1mA

Gate Charge (qg) @ Vgs

280nC @ 10V

Input Capacitance (ciss) @ Vds

11000pF @ 10V

Power - Max

250W

Mounting Type

Through Hole

Package / Case

TO-3P(L) (2-21F1B)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.095 Ohms

Drain-source Breakdown Voltage

500 V

Continuous Drain Current

50 A

Power Dissipation

250 W

Mounting Style

Through Hole

Gate Charge Qg

280 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 6
Download datasheet (419Kb)

Chopper Regulator DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

DCDrain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

DD =

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

90 V, T

Pulse (Note 1)

= 20 kΩ)

: I

: V

= 25°C (initial), L = 357 μH, R

(Note 1)

(Note 2)

DSS

= 2.4 to 3.4 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

stg

Symbol

DS (ON)

th (ch−a)

th (ch−c)

2SK3132

| = 33 S (typ.)

= 0.07 Ω (typ.)

= 10 V, I

−55 to 150

Rating

= 500 V)

500

±30

200

250

525

150

35.7

Max

0.5

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 50 A

Weight: 9.75 g (typ.)

JEDEC

JEITA

TOSHIBA

2-21F1B

2009-09-29

—

2SK3132

Unit: mm

Related parts for 2SK3132(Q)

2SK3132(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK3132 2009-09-29 ...

Page 4

4 2SK3132 2009-09-29 ...

Page 5

Ω 357 μ 2SK3132 1 ⎛ B ⎞ VDSS 2 = ⋅ ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords

2sk313
2sk317
2sk3131
2SK3132(Q) datasheet
2SK3132(Q) data sheet
2SK3132(Q) pdf datasheet
2SK3132(Q) component
2SK3132(Q) part
2SK3132(Q) distributor
2SK3132(Q) RoHS
2SK3132(Q) datasheet download