NTR4171PT1G ON Semiconductor, NTR4171PT1G Datasheet - Page 3

• Manufacturer Part Number: NTR4171PT1G
• Description: MOSFET P-CH 30V 2.2A SOT23
• Manufacturer: ON Semiconductor

Specifications of NTR4171PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 15.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 15V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.30
0.25
0.20
0.15
0.10
0.05
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
0
0
−50
1.0
0
Figure 3. On−Resistance vs. Gate−to−Source
0.5
2.0
−25
V
I
Figure 5. On−Resistance Variation with
D
Figure 1. On−Region Characteristics
GS
−V
−4.5 V
= −2.2 A
−10 V
DS
1.0
= −4.5 V
T
3.0
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
−V
1.5
4.0
GS
, GATE VOLTAGE (V)
25
Temperature
2.0
5.0
Voltage
2.5
50
6.0
3.0
75
7.0
3.5
TYPICAL CHARACTERISTICS
100
V
T
I
D
8.0
GS
J
4.0
= −2.2 A
= 25°C
= −2.0 V
−2.2 V
−2.5 V
125
http://onsemi.com
9.0
4.5
150
5.0
10
3
10,000
1000
0.30
0.25
0.20
0.15
0.10
0.05
100
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
10
0
0
1.0
0
0
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
−2.0 V
1.0
V
1.25
DS
−V
−V
5.0
Figure 2. Transfer Characteristics
T
= −5 V
DS
2.0
J
GS
= 125°C
, DRAIN−TO−SOURCE VOLTAGE (V)
1.5
, GATE−TO−SOURCE VOLTAGE (V)
−I
−2.2 V
3.0
T
D
J
10
, DRAIN CURRENT (A)
1.75
= 25°C
Gate Voltage
4.0
vs. Voltage
T
T
J
J
= 150°C
= 125°C
5.0
2.0
15
T
J
= −55°C
6.0
2.25
−2.5 V
20
7.0
2.5
V
GS
8.0
T
25
J
= −10 V
2.75
−4.5 V
= 25°C
9.0
3.0
10
30