NTGS4141NT1G ON Semiconductor, NTGS4141NT1G Datasheet

MOSFET N-CH 30V 3.5A 6-TSOP

NTGS4141NT1G

Manufacturer Part Number
NTGS4141NT1G
Description
MOSFET N-CH 30V 3.5A 6-TSOP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTGS4141NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
560pF @ 24V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTGS4141NT1G
NTGS4141NT1GOSTR

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NTGS4141N
Power MOSFET
30 V, 7.0 A, Single N−Channel, TSOP−6
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size
2. Surface−mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 2
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(V
L = 1.0 mH, R
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t ≤ 10 s (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Low R
Low Gate Charge
Pb−Free Package is Available
Load Switch
Notebook PC
Desktop PC
(Cu area = 1.127 in sq [1 oz] including traces).
(Cu area = 0.0773 in sq).
DD
= 30 V, I
DS(on)
L
G
= 10.4 A, V
= 25 W)
Rating
Rating
(T
GS
J
t ≤ 10 s
t ≤ 10 s
Steady
Steady
Steady
State
State
State
= 25°C unless otherwise noted)
= 10 V,
t
p
= 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
Symbol
R
R
R
V
T
EAS
V
I
P
P
T
DSS
STG
T
θJA
θJA
θJA
DM
I
I
I
GS
D
D
S
J
D
D
L
,
−55 to
Value
Max
62.5
±20
150
260
125
248
5.0
3.6
7.0
1.0
2.0
3.5
2.5
0.5
2.0
30
21
54
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NTGS4141NT1
NTGS4141NT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
S4
M
G
(Note: Microdot may be in either location)
V
(BR)DSS
30 V
Device
1
ORDERING INFORMATION
= Device Code
= Date Code
= Pb−Free Package
Gate
http://onsemi.com
PIN ASSIGNMENT
CASE 318G
Drain
Drain
21.5 mW @ 10 V
STYLE 1
TSOP−6
30 mW @ 4.5 V
3
N−Channel
R
(Pb−Free)
Package
6
TSOP−6
TSOP−6
1
DS(on)
Source
Drain
Drain
Drain
5
Publication Order Number:
2
TYP
Source
4
3
Gate
1 2 5 6
4
3000/Tape & Reel
3000/Tape & Reel
Shipping
NTGS4141N/D
MARKING
DIAGRAM
S4 MG
I
D
7.0 A
G
MAX

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NTGS4141NT1G Summary of contents

Page 1

... Max Unit R 125 °C/W θJA R 62.5 Device θJA R 248 NTGS4141NT1 θJA NTGS4141NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on 4.5 V N− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES AND ...

Page 3

TYPICAL PERFORMANCE CURVES 25° 4 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.05 0.04 0.03 0.02 0. ...

Page 4

1000 C iss 800 600 400 C rss 200 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance ...

Page 5

TYPICAL PERFORMANCE CURVES 1000 D = 0.5 100 0.2 0.1 10 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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