NTGS4141NT1G ON Semiconductor, NTGS4141NT1G Datasheet - Page 2

• Manufacturer Part Number: NTGS4141NT1G
• Description: MOSFET N-CH 30V 3.5A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS4141NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 24V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS4141NT1G; NTGS4141NT1GOSTR

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN − SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Characteristic
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
Q
V
GS(TH)
R
Q
Q
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
GSS
G(TH)
G(TH)
t
DSS
R
OSS
RSS
RR
t
t
ISS
t
FS
GS
GD
GS
GD
t
SD
RR
a
b
r
f
G
/T
/T
http://onsemi.com
J
J
dI
V
V
V
V
V
V
S
V
I
V
V
V
GS
DS
V
GS
S
GS
V
V
I
/dt = 100 A/ms, I
GS
GS
GS
D
DS
GS
GS
GS
= 2.0 A
2
GS
DS
= 7.0 A, R
= 24 V
= 0 V,
= 0 V,
= 4.5 V, V
Test Condition
= 10 V, V
= 10 V, V
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
V
V
I
I
D
D
DS
DS
GS
= 7.0 A
= 7.0 A
, I
= 24 V
= 0 V
D
GS
D
DS
DS
G
DS
D
D
= 250 mA
D
= 250 mA
T
T
= 3.0 W
= 7.0 A
T
= 7.0 A
T
= ±20 V
= 6.0 A
J
J
= 15 V,
= 24 V,
= 15 V,
S
J
J
= 125°C
= 125°C
= 25°C
= 25°C
= 2.0 A
Min
1.0
30
18.4
21.5
0.85
1.85
0.78
0.63
Typ
560
115
5.7
1.9
3.0
6.0
0.8
3.0
2.8
6.0
4.0
9.0
6.0
8.0
30
30
75
12
15
18
15
±100
Max
1.0
3.0
1.0
10
25
35
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
nC
ns
ns
W
V
V
S
V