NTD4909N-1G ON Semiconductor, NTD4909N-1G Datasheet

MOSFET N-CH 30V 41A SGL DPAK-3

NTD4909N-1G

Manufacturer Part Number
NTD4909N-1G
Description
MOSFET N-CH 30V 41A SGL DPAK-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD4909N-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
17.5nC @ 10V
Input Capacitance (ciss) @ Vds
1314pF @ 15V
Power - Max
1.37W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4909N-1G
Manufacturer:
ON Semiconductor
Quantity:
150
Part Number:
NTD4909N-1G
Manufacturer:
ON
Quantity:
12 500
NTD4909N
Power MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 2
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
Continuous Drain
Current (R
(Note 2)
Power Dissipation
(R
Continuous Drain
Current (R
(Note 1)
Power Dissipation
(R
Pulsed Drain Current
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
L = 0.1 mH, I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Drain−to−Source Voltage
Gate−to−Source Voltage
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
CPU Power Delivery
DC−DC Converters
qJA
qJA
qJC
) (Note 1)
) (Note 2)
) (Note 1)
DS(on)
J
qJA
qJA
qJC
= 25°C, V
L(pk)
)
)
)
to Minimize Conduction Losses
Parameter
= 24 A, R
DD
(T
t
Steady
= 50 V, V
p
State
=10ms
J
G
= 25°C unless otherwise noted)
= 25 W)
GS
T
T
T
T
T
T
T
T
T
T
T
A
A
C
A
A
A
A
C
C
A
A
= 10 V,
= 100°C
= 100°C
= 100°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
I
Symbol
DmaxPkg
T
V
dV/dt
J
V
E
I
P
P
P
, T
T
DSS
DM
I
I
I
I
GS
D
D
D
AS
S
D
D
D
L
stg
−55 to
Value
"20
12.1
1.37
29.4
167
175
260
8.6
2.6
8.8
6.2
7.0
30
41
29
60
27
28
1
V/ns
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
1
CASE 369AA
(Bent Lead)
V
1 2
Drain
Drain 3
(BR)DSS
STYLE 2
30 V
DPAK
4
2
Source
3
ORDERING INFORMATION
G
Y
WW
4909N = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
http://onsemi.com
Gate
8.0 mW @ 10 V
12 mW @ 4.5 V
(Straight Lead)
CASE 369AD
R
1
= Year
= Work Week
= Pb−Free Package
Drain
DS(on)
Drain
D
1
4
IPAK
2
Publication Order Number:
2 3
3
S
MAX
Source
4
Gate
N−Channel
(Straight Lead
CASE 369D
1
NTD4909N/D
1
Drain
Drain
DPAK)
2
IPAK
4
I
D
2
3
41 A
MAX
3
Source
4

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NTD4909N-1G Summary of contents

Page 1

... CASE 369AD CASE 369D IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4909N = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD4909N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient − Steady State (Note 3) Junction−to−Ambient − Steady State (Note 4) 3. Surface−mounted on FR4 board using pad size Cu. 4. Surface−mounted on FR4 board using ...

Page 3

... Gate Resistance 7. Assume terminal length of 110 mils. ORDERING INFORMATION Order Number NTD4909NT4G NTD4909N−1G NTD4909N−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) J ...

Page 4

4 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.020 0.018 0.016 0.014 0.012 0.010 0.008 ...

Page 5

C iss 1000 C oss 500 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

Duty Cycle = 50% 20 0.1 Single Pulse 0.01 Psi Tab−A 0.001 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 8

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4909N/D ...

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