NTD4909N-1G ON Semiconductor, NTD4909N-1G Datasheet - Page 3

• Manufacturer Part Number: NTD4909N-1G
• Description: MOSFET N-CH 30V 41A SGL DPAK-3
• Manufacturer: ON Semiconductor

Specifications of NTD4909N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1314pF @ 15V
• Power - Max: 1.37W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7. Assume terminal length of 110 mils.
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
NTD4909NT4G
NTD4909N−1G
NTD4909N−35G
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Source Inductance (Note 7)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 7)
Gate Inductance (Note 7)
Gate Resistance
Specifications Brochure, BRD8011/D.
Order Number
Parameter
(T
J
= 25°C unless otherwise noted)
Symbol
Q
V
t
R
L
L
L
L
RR
ta
tb
SD
RR
G
S
D
D
G
IPAK Trimmed Lead
http://onsemi.com
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK
V
IPAK
GS
V
I
S
GS
= 0 V, dIs/dt = 100 A/ms,
= 30 A
3
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
T
T
J
J
= 125°C
= 25°C
Min
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
0.0164
Shipping
2.99
1.88
Typ
0.9
0.8
4.9
1.0
30
16
14
20
†
Max
1.1
2.0
Unit
nC
nH
ns
W
V