NTD4860NT4G ON Semiconductor, NTD4860NT4G Datasheet - Page 6

• Manufacturer Part Number: NTD4860NT4G
• Description: MOSFET N-CH 25V 10.4A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4860NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1308pF @ 12V
• Power - Max: 1.28W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD4860NT4G
NTD4860N--1G
NTD4860N--35G
0.01
1.0
0.1
1.0E--05
0.02
D = 0.5
0.05
0.1
0.2
SINGLE PULSE
Device
0.01
1.0E--04
TYPICAL PERFORMANCE CURVES
1.0E--03
Figure 13. Thermal Response
http://onsemi.com
IPAK Trimmed Lead
(3.5  0.15 mm)
t, TIME (ms)
(Pb--Free)
(Pb--Free)
(Pb--Free)
Package
DPAK
P
IPAK
6
(pk)
1.0E--02
DUTY CYCLE, D = t
t
1
t
2
1.0E--01
1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
θJC
(t) = r(t) R
-- T
C
2500 / Tape & Reel
= P
75 Units / Rail
75 Units / Rail
θJC
(pk)
1.0E+00
Shipping
1
R
θJC
(t)
†
1.0E+01