NTD40N03RT4G ON Semiconductor, NTD40N03RT4G Datasheet

NTD40N03RT4G

Manufacturer Part Number

NTD40N03RT4G

Description

MOSFET N-CH 25V 7.8A DPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD40N03RT4G.pdf (7 pages)

Specifications of NTD40N03RT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

16.5 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

7.8A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

5.78nC @ 4.5V

Input Capacitance (ciss) @ Vds

584pF @ 20V

Power - Max

1.5W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0126 Ohms

Forward Transconductance Gfs (max / Min)

20 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

45 A

Power Dissipation

2.1 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTD40N03RT4GOS
NTD40N03RT4GOS
NTD40N03RT4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Bonase Electronics (HK) Co., Limited

Part Number:

NTD40N03RT4G

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD40N03RT4G

Manufacturer:

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

Part Number:

NTD40N03RT4G

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTD40N03RT4G

Manufacturer:

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Quantity:

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Company:

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Part Number:

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Quantity:

300

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NTD40N03R

Power MOSFET

45 Amps, 25 Volts

N−Channel DPAK

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using 0.5 sq. in pad size.

2. When surface mounted to an FR4 board using minimum recommended

August, 2005 − Rev. 6

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Thermal Resistance − Junction−to−Case

Total Power Dissipation @ T

Drain Current

Thermal Resistance − Junction−to−Ambient

(Note 1)

Thermal Resistance − Junction−to−Ambient

(Note 2)

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

High−Efficiency DC−DC Converters

Planar HD3e Process for Fast Switching Performance

Low R

Low C

Low Gate Charge

Optimized for High Side Switching Requirements in

Pb−Free Packages are Available

− Continuous @ T

− Single Pulse (tp ≤ 10 ms)

pad size.

− Total Power Dissipation @ T

− Drain Current − Continuous @ T

− Total Power Dissipation @ T

− Drain Current − Continuous @ T

DS(on)

iss

to Minimize Driver Loss

to Minimize Conduction Loss

Parameter

= 25°C, Limited by Wires

= 25°C, Chip

= 25°C unless otherwise specified)

= 25°C

Symbol

, T

DSS

qJC

qJA

stg

−55 to

Value

71.4

±20

100

175

260

3.0

2.1

9.2

1.5

7.8

°C/W

Unit

Vdc

°C

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Gate

(Surface Mount)

CASE 369AA

1 2

STYLE 2

45 AMPERES, 25 VOLTS

DPAK

4 Drain

T40N03

Drain

DS(on)

ORDERING INFORMATION

& PIN ASSIGNMENTS

MARKING DIAGRAM

http://onsemi.com

Source

N−CHANNEL

= 12.6 mW (Typ)

= Year

= Work Week

= Device Code

= Pb−Free Package

Publication Order Number:

Gate

(Straight Lead)

CASE 369D

STYLE 2

4 Drain

DPAK

Drain

NTD40N03R/D

Source

Related parts for NTD40N03RT4G

NTD40N03RT4G Summary of contents

Page 1

NTD40N03R Power MOSFET 45 Amps, 25 Volts N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low R to Minimize Conduction Loss DS(on) • Low C to Minimize Driver Loss iss • Low Gate Charge • Optimized ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

V 3 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.040 0.032 0.024 T = ...

Page 4

iss 800 C rss 600 400 200 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 V = ...

Page 5

... SINGLE PULSE 0.01 0.00001 0.0001 ORDERING INFORMATION Device NTD40N03R NTD40N03RG NTD40N03R−1 NTD40N03R−1G NTD40N03RT4 NTD40N03RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD40N03R P (pk DUTY CYCLE ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD40N03R PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369AA−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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