NTD40N03RT4G ON Semiconductor, NTD40N03RT4G Datasheet - Page 2

• Manufacturer Part Number: NTD40N03RT4G
• Description: MOSFET N-CH 25V 7.8A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD40N03RT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.78nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 584pF @ 20V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0126 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD40N03RT4GOS; NTD40N03RT4GOS; NTD40N03RT4GOSTR

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (Note 3)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GS
DS
GS
GS
DS
= 0 Vdc, I
= 20 Vdc, V
= 20 Vdc, V
= V
= 10 Vdc, I
= ±20 Vdc, V
= 4.5 Vdc, I
= 10 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
= 250 mAdc)
D
GS
GS
= 10 Adc)
= 10 Adc)
DS
= 10 Adc)
Characteristics
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc)
(I
(V
S
(I
DS
S
= 10 Adc, V
J
(T
(V
= 150°C)
= 10 Adc, V
(V
J
= 20 Vdc, V
(I
dI
GS
= 25°C unless otherwise specified)
GS
S
V
I
S
D
DS
= 10 Adc, V
/dt = 100 A/ms) (Note 3)
= 10 Vdc, V
= 10 Adc, R
= 4.5 Vdc, I
= 10 Vdc) (Note 3)
GS
GS
GS
= 0 Vdc, T
http://onsemi.com
= 0 Vdc) (Note 3)
GS
= 0 V, f = 1 MHz)
NTD40N03R
DD
D
G
= 10 Adc,
= 0 Vdc,
= 3 W)
= 10 Vdc,
J
2
= 125°C)
V(br)
Symbol
R
V
t
t
I
C
I
DS(on)
Q
GS(th)
C
C
V
g
d(on)
d(off)
DSS
GSS
Q
Q
Q
t
t
t
oss
t
t
FS
rss
SD
RR
iss
rr
a
b
r
f
T
1
2
DSS
Min
1.0
25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.007
18.6
12.6
19.5
16.7
5.78
0.85
0.71
20.4
8.25
12.1
Typ
584
254
1.7
4.5
3.5
2.1
2.5
28
20
99
−
−
−
−
−
±100
Max
16.5
1.0
2.0
1.2
10
23
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
V dc
mW
nC
mC
pF
ns
ns