NTB6413ANT4G ON Semiconductor, NTB6413ANT4G Datasheet - Page 2

• Manufacturer Part Number: NTB6413ANT4G
• Description: MOSFET N-CH 100V 42A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB6413ANT4G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 136W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 42A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 42A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Characteristics
GS
= 10 V (Note 3)
(T
J
= 25°C Unless otherwise specified)
V
V
V
(BR)DSS
Symbol
Q
R
V
GS(th)
Q
(BR)DSS
t
t
I
I
C
G(TOT)
Q
Q
Q
DS(on)
C
V
V
GS(th)
C
d(on)
g
d(off)
DSS
GSS
G(TH)
R
t
t
t
FS
oss
GP
t
t
SD
rss
GS
GD
RR
iss
rr
a
b
r
G
f
http://onsemi.com
/T
/T
J
J
V
V
DS
I
2
V
GS
S
V
V
V
V
V
DS
V
I
GS
GS
GS
= 42 A
V
= 100 V
V
D
GS
DS
GS
dI
= 0 V,
GS
GS
= 42 A, R
Test Condition
= 0 V, V
= 10 V, V
= 10 V, V
SD
= V
= 25 V, V
= 0 V, I
= 10 V, I
= 0 V, I
= 5 V, I
f = 1 MHz
/dt = 100 A/ms
I
D
DS
= 42 A
, I
GS
D
D
G
S
D
DS
DD
= 250 mA
D
GS
T
= 250 mA
T
= 6.2 W
= 42 A,
T
= $20 V
T
= 20 A
J
= 42 A
J
J
J
= 80 V,
= 80 V,
= 0 V,
= 125°C
= 125°C
= 25°C
= 25°C
Min
100
2.0
1800
25.6
17.9
0.92
0.83
Typ
115
280
100
230
8.1
2.0
5.8
2.4
51
10
26
13
84
52
71
73
56
17
$100
Max
100
1.0
4.0
1.3
28
mV/°C
mV/°C
Unit
mW
nA
nC
nC
mA
pF
ns
ns
W
V
V
S
V
V