NTB6413ANT4G ON Semiconductor, NTB6413ANT4G Datasheet - Page 3

• Manufacturer Part Number: NTB6413ANT4G
• Description: MOSFET N-CH 100V 42A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB6413ANT4G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 136W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 42A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 42A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.06
0.05
0.04
0.03
0.02
0.01
100
2.5
1.5
0.5
80
60
40
20
0
3
2
1
−50
0
5
V
T
I
GS
J
D
Figure 3. On−Region versus Gate Voltage
= 25°C
−25
= 42 A
Figure 5. On−Resistance Variation with
= 10 V
Figure 1. On−Region Characteristics
V
V
DS
GS
T
1
6
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
25
Temperature
2
7
50
10 V
75
3
8
100
TYPICAL CHARACTERISTICS
T
125
I
D
J
4
9
= 25°C
= 42 A
http://onsemi.com
150
5.5 V
7.5 V
6.5 V
6.0 V
5.0 V
175
5
10
3
10000
1000
0.08
0.06
0.04
0.02
0.00
100
100
80
60
40
20
0
10
10
2
Figure 4. On−Resistance versus Drain Current
V
V
V
Figure 6. Drain−to−Source Leakage Current
GS
DS
GS
20
= 0 V
w 10 V
= 10 V
V
V
Figure 2. Transfer Characteristics
DS
3
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
30
20
I
D
, DRAIN CURRENT (A)
and Gate Voltage
40
4
versus Voltage
T
J
T
T
T
T
= 125°C
T
J
J
T
J
J
J
50
J
= 125°C
= 175°C
= 125°C
= 150°C
= −55°C
= 25°C
5
60
30
T
J
= −55°C
70
6
T
J
80
= 25°C
7
40
90 100
8