IRF740S Vishay, IRF740S Datasheet - Page 2

• Manufacturer Part Number: IRF740S
• Description: MOSFET N-CH 400V 10A D2PAK
• Manufacturer: Vishay

Specifications of IRF740S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF740S

IRF740S, SiHF740S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
V
GS
GS
J
R
DS
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
Reference to 25 °C, I
= 10 V
= 10 V
J
= 9.1 Ω, R
= 320 V, V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
TEST CONDITIONS
DS
DS
DD
DS
GS
-
-
-
= 400 V, V
= V
= 200 V, I
= 50 V, I
F
= 0 V, I
V
V
V
= 10 A, dI/dt = 100 A/µs
GS
DS
S
GS
GS
D
I
GS
D
= 10 A, V
= ± 20 V
= 20 Ω, see fig. 10
, I
= 25 V,
= 10 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
= 250 µA
D
I
GS
= 6.0 A
D
= 10 A,
= 6.0 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
G
= 0 V
b
= 320 V,
b
b
MAX.
D
S
b
b
D
S
1.0
62
40
b
MIN.
400
2.0
5.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-83029-Rev. A, 19-Jan-09
Document Number: 91055
TYP.
1400
0.49
330
120
370
4.5
7.5
3.8
14
27
50
24
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.55
S
250
790
4.0
9.0
2.0
8.2
25
63
32
10
40
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V