IRF740S Vishay, IRF740S Datasheet - Page 3

• Manufacturer Part Number: IRF740S
• Description: MOSFET N-CH 400V 10A D2PAK
• Manufacturer: Vishay

Specifications of IRF740S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF740S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91055
S-83029-Rev. A, 19-Jan-09
91055_01
91055_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
-1
-1
Top
Bottom
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
V
, Drain-to-Source Voltage (V)
GS
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
C
4.5 V
4.5 V
C
= 150 °C
= 25 °C
91055_03
91055_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 10 A
150
= 10 V
V
5
T
GS ,
J ,
°
C
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRF740S, SiHF740S
°
C
6
20 40 60 80 100 120 140 160
7
Vishay Siliconix
20 µs Pulse Width
V
8
DS
=
50 V
9
www.vishay.com
10
3