IRF840LCL Vishay, IRF840LCL Datasheet
IRF840LCL
Specifications of IRF840LCL
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IRF840LCL Summary of contents
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... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration PAK (TO-263) I PAK (TO-262 ORDERING INFORMATION 2 Package D PAK (TO-263) IRF840LCSPbF Lead (Pb)-free SiHF840LCS-E3 IRF840LCS SnPb SiHF840LCS Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ...
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... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted V GS Top 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4 Drain-to-Source Voltage (V) 91068_01 DS Fig Typical Output Characteristics V GS Top 8.0 V 7.0 V 6.0 V 5 Bottom 4 Drain-to-Source Voltage ( 91068_02 Fig Typical Output Characteristics Document Number: 91068 S09-0071-Rev ...
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... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix 2400 MHz iss 2000 rss oss 1600 1200 800 400 Drain-to-Source Voltage ( 91068_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 250 100 Total Gate Charge (nC) 91068_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss ...
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... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL 8.0 6.0 4.0 2.0 0 100 T , Case Temperature (°C) 91068_09 C Fig Maximum Drain Current vs. Case Temperature 0.5 0.2 0.1 0.1 0.05 0.02 0. 91068_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91068 S09-0071-Rev ...
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... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1200 1000 800 600 400 200 100 Starting T , Junction Temperature (°C) 91068_12c Top 3.6 A 5.1 A Bottom 8.0 A 125 150 Current regulator Same type as D.U.T. 50 kΩ ...
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... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...