IRF530STRL Vishay, IRF530STRL Datasheet

MOSFET N-CH 100V 14A D2PAK

IRF530STRL

Manufacturer Part Number
IRF530STRL
Description
MOSFET N-CH 100V 14A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF530STRL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
670pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF530STRLPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91020
S-82996-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
G D
(nC)
(nC)
(V)
≤ 14 A, dI/dt ≤ 140 A/µs, V
= 25 V, starting T
D
(Ω)
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 528 µH, R
c
a
DD
b
V
GS
≤ V
D
IRF530SPbF
SiHF530S-E3
IRF530S
SiHF530S
e
= 10 V
2
DS
PAK (TO-263)
G
, T
N-Channel MOSFET
e
J
Single
≤ 175 °C.
100
5.5
26
11
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.16
GS
AS
at 10 V
= 14 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF530STRLPbF
SiHF530STL-E3
IRF530STRL
SiHF530STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
a
a
SYMBOL
T
dV/dt
a
J
V
V
E
E
I
a
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF530S, SiHF530S
design,
- 55 to + 175
D
IRF530STRRPbF
SiHF530STR-E3
IRF530STRR
SiHF530STR
2
LIMIT
0.025
300
PAK (TO-263)
± 20
0.59
100
8.8
3.7
5.5
14
10
56
69
14
88
low
Vishay Siliconix
d
on-resistance
a
a
a
www.vishay.com
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF530STRL Summary of contents

Page 1

... The PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can N-Channel MOSFET dissipate typical surface mount application PAK (TO-263) IRF530STRLPbF SiHF530STL-E3 IRF530STRL SiHF530STL = 25 °C, unless otherwise noted ° 100 ° ° ...

Page 2

... IRF530S, SiHF530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Document Number: 91020 S-82996-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91020_03 = 25 ° µs Pulse Width T = 175 ° 91020_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF530S, SiHF530S Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3.5 ...

Page 4

... IRF530S, SiHF530S Vishay Siliconix 1400 MHz iss gs 1200 rss oss ds 1000 800 600 400 200 Drain-to-Source Voltage ( 91020_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91020_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91020_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91020 S-82996-Rev. A, 19-Jan-09 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF530S, SiHF530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF530S, SiHF530S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91020_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 200 Top ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91020. Document Number: 91020 S-82996-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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