IRFIB7N50LPBF Vishay, IRFIB7N50LPBF Datasheet

MOSFET N-CH 500V 6.8A TO220FP

IRFIB7N50LPBF

Manufacturer Part Number
IRFIB7N50LPBF
Description
MOSFET N-CH 500V 6.8A TO220FP
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRFIB7N50LPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
2220pF @ 25V
Power - Max
46W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFIB7N50LPBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting T
c. I
d. 1.6 mm from case.
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
TO-220 FULLPAK
(nC)
(nC)
(V)
≤ 6.8 A, dI/dt ≤ 650 A/µs, V
(Ω)
J
= 25 °C, L = 24 mH, R
a
a
G
c
D
a
S
b
DD
V
GS
G
≤ V
= 25 Ω, I
= 10 V
DS
, dV/dt = 24 V/ns, T
G
Single
N-Channel MOSFET
500
92
24
44
AS
= 6.8 A (see fig. 14).
C
Power MOSFET
D
S
= 25 °C, unless otherwise noted
V
0.320
GS
6-32 or M3 screw
at 10 V
J
≤ 150 °C.
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFIB7N50LPbF
SiHFIB7N50L-E3
= 100 °C
= 25 °C
FEATURES
• Super Fast Body Diode Eliminates the Need for
• Lower Gate Charge Results in Simpler Drive
• Enhanced dV/dt Capabilities Offer Improved
• Higher Gate Voltage Threshold Offers Improved Noise
• Lead (Pb)-free
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
External Diodes in ZVS Applications
Reqirements
Ruggedness
Immunity
IRFIB7N50L, SiHFIB7N50L
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
- 55 to + 150
LIMIT
300
± 30
0.37
500
550
6.8
4.3
6.8
4.6
1.1
27
46
24
10
Vishay Siliconix
d
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
RoHS
V
A
A
COMPLIANT
1

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IRFIB7N50LPBF Summary of contents

Page 1

... Higher Gate Voltage Threshold Offers Improved Noise Immunity D • Lead (Pb)-free APPLICATIONS G • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies S • Motor Control Applications N-Channel MOSFET TO-220 FULLPAK IRFIB7N50LPbF SiHFIB7N50L- °C, unless otherwise noted ° 100 ° ° ...

Page 2

... IRFIB7N50L, SiHFIB7N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... PULSE WIDTH Tj = 150°C 0.1 0 Drain-to-Source Voltage (V) Fig Typical Output Characteristics Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 10 100 5.0V 10 100 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix 100 150 ° ° ≤ 60 μs PULSE WIDTH 0 Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics 3 ...

Page 4

... IRFIB7N50L, SiHFIB7N50L Vishay Siliconix 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss 100 C rss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 100 150 200 250 300 350 400 450 500 550 V DS, Drain-to-Source Voltage (V) Fig Typical Output Capacitance Stored Energy vs. V www ...

Page 5

... Case Temperature (°C) Fig Maximum Drain Current vs. Case Temperature Document Number: 91177 S09-0063-Rev. A, 02-Feb-09 IRFIB7N50L, SiHFIB7N50L 100μsec 1msec 10msec 90 % 1000 10000 10 % 125 150 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 11a - Switching Time Test Circuit ...

Page 6

... IRFIB7N50L, SiHFIB7N50L Vishay Siliconix 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 5.0 4 250μA 3.0 2.0 1.0 -75 -50 - Temperature ( °C ) Fig Threshold Voltage vs. Temperature www.vishay.com ...

Page 7

... Fig. 15a - Unclamped Inductive Test Circuit Fig. 15b - Unclamped Inductive Waveforms Document Number: 91177 S09-0063-Rev. A, 02-Feb- Driver + - IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Charge Fig. 16a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U.T. - ...

Page 8

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91177. www.vishay.com ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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