IRFIB7N50LPBF Vishay, IRFIB7N50LPBF Datasheet - Page 7

• Manufacturer Part Number: IRFIB7N50LPBF
• Description: MOSFET N-CH 500V 6.8A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB7N50LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2220pF @ 25V
• Power - Max: 46W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFIB7N50LPBF

Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
I
AS
Fig. 15a - Unclamped Inductive Test Circuit
Fig. 15b - Unclamped Inductive Waveforms
R
20 V
G
V
DS
t
p
I
AS
D.U.T
t
0.01 Ω
L
p
15 V
V
DS
Driver
+
- V
A
DD
A
10 V
IRFIB7N50L, SiHFIB7N50L
12 V
Fig. 16a - Basic Gate Charge Waveform
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V
G
GS
Fig. 16b - Gate Charge Test Circuit
Same type as D.U.T.
Q
Current regulator
GS
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
Q
Charge
Q
GD
G
I
G
Vishay Siliconix
D.U.T.
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D
www.vishay.com
+
-
V
DS
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