IRL3803 International Rectifier, IRL3803 Datasheet
IRL3803
Specifications of IRL3803
Available stocks
Related parts for IRL3803
IRL3803 Summary of contents
Page 1
... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– 91301D IRL3803 ® HEXFET Power MOSFET 30V DSS R = 0.006 DS(on 140A D S TO-220AB Max. ...
Page 2
... IRL3803 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
Page 3
... ate-to -So urce Voltag e ( Fig 3. Typical Transfer Characteristics 0 2.0 1.5 1.0 0.5 0.0 A 7.0 8.0 9.0 IRL3803 VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V 2. 0µ ° rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics, ...
Page 4
... IRL3803 iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° ° 0.4 0.8 1.2 1.6 2 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 2.4 2.8 3 CIR FIG otal G ate C harge ( Fig 6. Typical Gate Charge Vs. ...
Page 5
... RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL3803 D.U. 4.5V Pulse Width µs Duty Factor ...
Page 6
... IRL3803 V DS D.U. 4 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 0. (BR)DSS V DD Fig 12c. Maximum Avalanche Energy 12V tarting unc tion T em perature (° Vs. Drain Current Current Regulator Same Type as D.U.T. ...
Page 7
... Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V GS di/dt dv/ Forward Drop I SD IRL3803 DD * ...
Page 8
... IRL3803 TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. (. (. (. & TO-220AB Part Marking Information WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K& ...
Page 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...