IRL3803 International Rectifier, IRL3803 Datasheet - Page 2

• Manufacturer Part Number: IRL3803
• Description: MOSFET N-CH 30V 140A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3803

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 71A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3803

IRL3803
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
I
I
d(on)
r
d(off)
f
SM
on
S
rr
DSS
GSS
V
fs
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
V
I
(BR)DSS
Repetitive rating; pulse width limited by
R
T
max. junction temperature. ( See fig. 11 )
SD
DD
J
G
= 25 , I
= 15V, starting T
175°C
71A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
AS
= 71A. (See Figure 12)
130A/µs, V
J
= 25°C, L = 180µH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Min. Typ. Max. Units
30
55
–––
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Caculated continuous current based on maximum allowable
Pulse width
package refer to Design Tip # 93-4
junction temperature;for recommended current-handling of the
0.052 –––
5000 –––
1800 –––
–––
––– 0.006
––– 0.009
–––
–––
–––
–––
–––
–––
7.5
880
–––
–––
––– -100
–––
230
4.5
––– 140
–––
120
450
14
35
29
–––
–––
–––
–––
–––
250
100
140
–––
–––
–––
–––
–––
470
180
680
1.3
25
41
78
300µs; duty cycle
V/°C
nA
nC
nH
µA
ns
pF
nC
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 71A
= 71A
= 25°C, I
= 25°C, I
= 0.20
= 1.3
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6 and 13
= 15V
= 0V
GS
, I
2%.
D
V
S
F
D
D
D
See Fig. 10
Conditions
GS
= 250µA
D
GS
GS
Conditions
= 71A, V
= 71A
= 250µA
= 71A
= 71A
= 59A
= 4.5V
= 0V
= 0V, T
D
= 1mA
GS
J
= 150°C
= 0V
S
+L
D
G
)
G
D
S
S
D