IRF7353D1 International Rectifier, IRF7353D1 Datasheet - Page 4

• Manufacturer Part Number: IRF7353D1
• Description: MOSFET N-CH 30V 6.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7353D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7353D1

IRF7353D1
4
1200
Fig 5. Typical On-Resistance Vs. Drain
900
600
300
0.040
0.036
0.032
0.028
0.024
0.020
0
1
0
V
Fig 7. Typical Capacitance Vs.
DS
V
C
C
C
Drain-to-Source Voltage
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
10
C
C
C
I , Drain Current (A)
oss
rss
Current
D
iss
= 0V,
= C
= C
= C
V
gs
ds
gd
GS
+ C
+ C
10
= 4.5V
V
20
GS
gd
gd
f = 1MHz
, C
= 10V
Power Mosfet Characteristics
ds
SHORTED
30
100
40
A
A
Fig 6. Typical On-Resistance Vs. Gate
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
8
4
0
0
0
I =
D
Fig 8. Typical Gate Charge Vs.
5.8A
V
Gate-to-Source Voltage
GS
Q , Total Gate Charge (nC)
3
G
10
, Gate-to-Source Voltage (V)
Voltage
6
I
V
D
20
DS
= 5.8A
= 15V
9
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30
12
40
15
A