IRF7353D1 International Rectifier, IRF7353D1 Datasheet

MOSFET N-CH 30V 6.5A 8-SOIC

IRF7353D1

Manufacturer Part Number
IRF7353D1
Description
MOSFET N-CH 30V 6.5A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7353D1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
32 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7353D1

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7353D1
Quantity:
11
Part Number:
IRF7353D1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7353D1TR
Manufacturer:
SAM
Quantity:
1 027
Part Number:
IRF7353D1TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
Absolute Maximum Ratings (T
Thermal Resistance Ratings
www.irf.com
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Notes:

ƒ
l
l
l
l
l
l
Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
θJA
D
D
GS
J,
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Starting T
I
Surface mounted on FR-4 board, t ≤ 10sec
Co-packaged HEXFET
and Schottky Diode
Ideal For Buck Regulator Applications
N-Channel HEXFET
Low V
Generation 5 Technology
SO-8 Footprint
@ T
@ T
SD
T
@T
@T
STG
≤ 4.0A, di/dt ≤ 74A/µs, V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
F
J
Schottky Rectifier
= 25°C, L = 10mH, R
DD
Continuous Drain Current
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Junction-to-Ambient …
≤ V
®
G
Power MOSFET
(BR)DSS
= 25Ω, I
A
, T
= 25°C unless otherwise noted)
AS
J
≤ 150°C
= 4.0A
G
A
S
A
FETKY
1
2
3
4
Top View
ä
MOSFET / Schottky Diode
8
6
5
7
-55 to +150
Maximum
IRF7353D1
± 20
K
Maximum
K
D
D
-5.0
6.5
5.2
2.0
1.3
52
16
62.5
Schottky Vf = 0.39V
R
DS(on)
V
PD - 91802C
DSS
SO-8
= 0.029Ω
= 30V
Units
mW/°C
°C/W
Units
V/ns
10/20/04
°C
W
A
V
1

Related parts for IRF7353D1

IRF7353D1 Summary of contents

Page 1

... Surface mounted on FR-4 board, t ≤ 10sec www.irf.com FETKY Power MOSFET Top View = 25°C unless otherwise noted 25Ω 4.0A AS ≤ 150° (BR)DSS 91802C IRF7353D1 ä MOSFET / Schottky Diode 30V DSS 0.029Ω DS(on Schottky Vf = 0.39V SO-8 Maximum Units 6 ...

Page 2

... IRF7353D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... TOP BOTTOM 3. 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 10V 0.0 A -60 -40 -20 4.5 5.0 Fig 4. Normalized On-Resistance IRF7353D1 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 10V GS 0 ...

Page 4

... IRF7353D1 0.040 V = 4.5V GS 0.036 0.032 0.028 0.024 V GS 0.020 Drain Current (A) D Fig 5. Typical On-Resistance Vs. Drain Current 1200 1MHz iss rss oss ds gd 900 C iss C oss 600 C 300 rss Drain-to-Source Voltage (V) DS Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage 4 Power Mosfet Characteristics ...

Page 5

... Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 10 1 www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse Duration (sec 150° 25°C J 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) SD Fig 10. Typical Source-Drain Diode Forward Voltage IRF7353D1 Notes: 1. Duty factor Peak thJA 1.4 1 ...

Page 6

... IRF7353D1 Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 150° 125° 25°C J 160 140 120 100 0.8 1.0 (V) FM (V) F Fig.14 - Maximum Allowable Ambient T = 50°C J 25° ...

Page 7

... SO-8 (Fetky) Part Marking Information EXAMPLE: THIS IS AN IRF7807D1 (FETKY) INTERNATIONAL www.irf.com B H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] XXXX 807D1 RECTIFIER LOG O IRF7353D1 INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b ...

Page 8

... IRF7353D1 SO-8 (Fetky) Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Related keywords