IRF7663 International Rectifier, IRF7663 Datasheet

MOSFET P-CH 20V 8.2A MICRO8

IRF7663

Manufacturer Part Number
IRF7663
Description
MOSFET P-CH 20V 8.2A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7663

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 5V
Input Capacitance (ciss) @ Vds
2520pF @ 10V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7663
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7663TRPBF
Manufacturer:
INFINEON
Quantity:
3 001
Absolute Maximum Ratings
Thermal Resistance
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
@ T
@ T
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
JA
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
T op V ie w
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
1.15
D
D
D
-8.2
-6.6
115
± 12
70
D
-20
-66
1.8
A
10
MICRO8
®
R
IRF7663
DS(on)
Power MOSFET
V
DSS
= 0.020
= -20V
PD-91866B
mW/°C
Units
Units
°C/W
W
mJ
°C
V
A
V
1
5 /25/00

Related parts for IRF7663

IRF7663 Summary of contents

Page 1

... T T Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Max. @ -4. -4. 150 Max. PD-91866B IRF7663 ® Power MOSFET -20V DSS 0.020 D DS(on) MICRO8 Units -20 V -8.2 -6.6 A -66 1.8 W 1.15 10 mW/°C 115 mJ ± °C Units 70 ° ...

Page 2

... IRF7663 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP BOTTOM 10 ° 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 ° 1.0 0.5 = -15V 0.0 3.5 4.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7663 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -2.25V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -8. ...

Page 4

... IRF7663 4000 0V, C iss = rss = oss = 3000 Ciss 2000 1000 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 0.5 1.0 1.5 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ D SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 300 240 180 120 60 0 125 150 25 ° Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7663 I D TOP -1.6A -2.9A BOTTOM -3. 100 125 150 ° J Vs. Drain Current ...

Page 6

... IRF7663 Package Outline Micro8 Dimensions are shown in millimeters (inches (. (. .5M -1 982 . Part Marking Information Micro8 EX AM PLE : 7501 (. ° 6 ° 0 ° 6 ° . ( YEA www.irf.com ...

Page 7

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ www.irf.com CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7663 5/00 7 ...

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