IRF7807D1 International Rectifier, IRF7807D1 Datasheet - Page 4

• Manufacturer Part Number: IRF7807D1
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7807D1
4
2000
1600
1200
800
400
0
Fig 7. Normalized On-Resistance
2.0
1.5
1.0
0.5
1
Fig 5. Typical Capacitance Vs.
-60 -40 -20
I D = 7.0A
V GS = 4.5V
Drain-to-Source Voltage
V
DS
Vs. Temperature
V
C
C
C
T J , Junction Temperature ( °C )
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
0
0V,
C
C
C
C oss
C rss
C iss
gs
gd
ds
20
+ C
+ C
10
40
f = 1MHz
gd ,
gd
60
C
ds
80 100 120 140 160
SHORTED
100
100
6.0
4.0
2.0
0.0
10
1
Fig 8. Typical Transfer Characteristics
2.5
0
Fig 6. Typical Gate Charge Vs.
I D = 7.0A
V DS = 16V
Gate-to-Source Voltage
V GS , Gate-to-Source Voltage (V)
2
Q G, Total Gate Charge (nC)
4
T J = 25°C
3.0
6
V DS = 10V
380µs PULSE WIDTH
8
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T J = 150°C
10
3.5
12