IRF7807D1 International Rectifier, IRF7807D1 Datasheet - Page 6

• Manufacturer Part Number: IRF7807D1
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7807D1
6
Fig. 12 - Typical Forward Voltage Drop
100
0.1
10
1
0.0
Tj = 125°C
Tj = 25°C
MOSFET , Body Diode & Schottky Diode Characteristics
0.2
Forward Voltage Drop - V F ( V )
Characteristics
0.4
0.6
0.8
1.0
1.2
0.0001
0.001
0.01
100
0.1
10
1
Reverse Current Vs. Reverse Voltage
0
Fig. 13 - Typical Values of
Tj = 150°C
5
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - V R (V)
10
15
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20
25
30