IRF9530NS International Rectifier, IRF9530NS Datasheet - Page 2

• Manufacturer Part Number: IRF9530NS
• Description: MOSFET P-CH 100V 14A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9530NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9530NS

Electrical Characteristics @ T
IRF9530NS/L
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
Source-Drain Ratings and Characteristics
I
I
L
Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
DSS
GSS
S
d(on)
r
d(off)
f
on
SM
rr
S
V
fs
For recommended footprint and soldering techniques refer to application note #AN-994.
(BR)DSS
DS(on)
GS(th)
g
gd
iss
oss
rss
gs
SD
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
I
T
SD
G
J
= 25 , I
175°C
/ T
-8.4A, di/dt
J
J
Drain-to-Source Leakage Current
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L =7.0mH
AS
= -8.4A. (See Figure 12)
-490A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
-100
Uses IRF9530N data and test conditions
Pulse width
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.2
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.11 –––
–––
––– 0.20
–––
–––
–––
––– -250
–––
–––
–––
–––
760
260
170
––– -100
–––
–––
–––
130
650
15
58
45
46
7.5
–––
-4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
100
190
970
-25
8.3
58
-14
-56
300µs; duty cycle
32
V/°C
µA
nC
nH
nA
ns
pF
ns
nC
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -8.4A
= -8.4A
= 25°C, I
= 25°C, I
= 9.1
= 6.2
= V
= -80V, V
= 0V, I
= -10V, I
= -50V, I
= -100V, V
= 20V
= -20V
= -80V
= -10V, See Fig. 6 and 13
= 0V
= -25V
= -50V
2%.
GS
, I
See Fig. 10
D
F
S
D
= -250µA
D
= -8.4A
Conditions
D
Conditions
= -8.4A, V
GS
= -250µA
= -8.4A
= -8.4A
GS
= 0V, T
= 0V
D
= -1mA
GS
G
J
= 150°C
= 0V
S
+L
D
S
D
)