IRFZ48NS International Rectifier, IRFZ48NS Datasheet - Page 6

• Manufacturer Part Number: IRFZ48NS
• Description: MOSFET N-CH 55V 64A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ48NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 1970pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ48NS

IRFZ48NS/IRFZ48NL
V
Fig 13a. Basic Gate Charge Waveform
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
GS
V
I
G
A S
Q
GS
R G
2 0 V
V D S
t p
Charge
Q
Q
GD
G
t p
I A S
D .U .T
0.0 1
L
V
(B R )D SS
15 V
D R IV E R
+
-
V D D
A
360
300
240
180
120
60
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
12V
V
50
GS
Same Type as D.U.T.
Current Regulator
J
.2 F
Vs. Drain Current
75
50K
3mA
Current Sampling Resistors
100
.3 F
I
G

125
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
150
°
I D
+
13A
23A
32A
-
V
DS
175